A77 MARKING Search Results

marking CODE JTS

Abstract: Q62702-A77 marking JTs BAS28
Contextual Info: Silicon Switching Diode Array BAS 28 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

marking CODE JTS

Abstract: BAS28 marking JTs Q62702-A77 JTS MARKING
Contextual Info: Silicon Switching Diode Array BAS 28 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Contextual Info: SIEMENS BAS 28 Silicon Switching Diode Array • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * o Package1) SOT-143 NJ - È H- «1 3 2 0- N - 0

Contextual Info: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84  -10 qC TO RELATIVE HUMIDITY  40 % TO 60 qC (2) 95 % RH MAX. (3)

marking JT

Abstract: 28 MARKING Q62702-A77
Contextual Info: BAS 28 Silicon Switching Diode Array • • For high-speed switching Electrically isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAS 28 JT Q62702-A163 Q62702-A77 SOT 143 Maximum ratings Parameter

Q62702-A77

Abstract: EHA07008
Contextual Info: SIEMENS Silicon Switching Diode Array BAS 28 • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * Package1) 1 SOT-143 r ^ i o- pH-° 3 i o 2 0 - ^ - O

EIA-364-65

Abstract: EIA364-65 EIA-364-23 EIA-364-13 EIA-364-09 EIA-364-20 EIA-364-27 EIA-364-31
Contextual Info: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 1 50 V AC VOLTAGE RATING 85 qC 0.75A CURRENT No.a1㨪a8,a77㨪a84 STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE  -40 qC TO  60 qC (2) 95 % RH MAX. (3) RELATIVE HUMIDITY

Contextual Info: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84  -40 qC TO RELATIVE HUMIDITY  40 % TO 60 qC (2) 95 % RH MAX. (3)

TRANSISTOR A77

Abstract: A77 marking a77 package marking Marking code mps
Contextual Info: MPSA77 MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Contextual Info: LED-Anzeigesysteme In die Entwicklung dieser Bausteine ist das über Jahrzehnte erworbene Knowhow der Firma MENTOR als Entwickler und Lieferant von Bauelementen für die Industrieelektronik geflossen. Die Bauelementen-Vielfalt erstreckt sich von THTEinzelanzeigen in unterschiedlichsten

Contextual Info: LED-Anzeigesysteme In die Entwicklung dieser Bausteine ist das über Jahrzehnte erworbene Knowhow der Firma MENTOR als Entwickler und Lieferant von Bauelementen für die Industrieelektronik geflossen. Die Bauelementen-Vielfalt erstreckt sich von THTEinzelanzeigen in unterschiedlichsten

R8915

Abstract: ERC25 marking AJ 7
Contextual Info: ERC25 i .2A I W I W i i : Outline Drawings FAST RECOVERY DIODE : Features IR High voltage by mesa design. * Marking tf High reliability * 7 - n - r :W Color code : Green : Applications Abridged type name *V HiBE? 5* Voltage class High speed sw itching. - V -r-9

b72 voltage regulator

Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.

Device marking code B12 B13 B14 B15 B16

Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Contextual Info: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC

marking code B49

Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Contextual Info: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC

siemens a55

Abstract: siemens A70 marking b28 siemens a57 siemens b38
Contextual Info: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including

marking E47

Abstract: cj cl a17 E43 marking C67-C70 SD-85801-018
Contextual Info: B A B 10 11 12 13 14 15 16 4 5 6 7 8 9 VI EW 0 M MA ING SID 17 18 19 20 21 22 23 24 25 26 27 28 29 O m 2 3 ROW 1 E B D C B 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B

A67-A72

Contextual Info: ROW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 E B B B B B B B B B B B B B B B B B B B B B B B B B B □ C B B B B B B B B B B B B B B B B B B B B B B B B

MARKING B83

Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Contextual Info: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including

HYR163249G-653

Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Contextual Info: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

Contextual Info: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

A74 marking

Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Contextual Info: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V