A14A1 Search Results

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

X009

Abstract: MGAB A10 fbnl MGAB
Contextual Info: TEMx28 Device 21/28 Channel Dual Bus High Density Mapper TXC-04222 DESCRIPTION • Add/drop up to 28 E1, DS1, or VT/TU payloads from two add and two drop STM-1/VC4, STS-3 buses • Add bus and drop bus timing modes • Cross mapping applications DS1 mapped to/from

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and

C5R5

Abstract: Western Digital 68-PIN WD83C580A
Contextual Info: WD83C580A PC Bus Interface Controller FEATURES • Direct interface to IBM PC1" expansion bus for most I/O adapter functions * o o' O y J S. o • Software enable for PC interrupt request • Software selection of PC DMA channels n / < o o • Handshaking control for two DMA channels on

circuit card assy input filter for miller 200 Dx

Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Contextual Info: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper

H 1061

Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

stk 442 -130

Abstract: xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR
Contextual Info: MC68HC711D3/D Rev. 1 MC68HC711D3 TECHNICAL DATA MOTOROLA MC68HC711D3 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out

GC102

Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
Contextual Info: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com­ patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support­

K4C560838C-TCB

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

FM1808

Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

Contextual Info: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

CHIPset for 80286

Abstract: SL6003 A1719 logicstar TL4A sl6005
Contextual Info: ADDRESS & DATA BUS BUFFERS SL6003, SL6004, SL6005 17 PC/A T COMPATIBLE CHIP-SET W PRELIMINARY The SL6003 provides address latches and control buffers for the PC / AT system. Control signals from the SL6001 are buffered by the SL6003 and tri-stated for the expansion and the I/O buses. This

SST29EE010

Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

ZUA15

Abstract: ZUA12
Contextual Info: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asyncronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed circuit

HM6207HLP-35

Abstract: HM6207HLP-45
Contextual Info: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)

manual for Misa

Abstract: ruy 1015
Contextual Info: AMD£I Am486 DX/DX2 Microprocessor Hardware Reference Manual AMD's Marketing Communications Department specifies environmentally sound agricultural irks and recycled papers, making this book highly recyclable. Am486™DX/DX2 Microprocessor Hardware Reference

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

RD1-125BAG1A

Abstract: diode smd m7 RTL8201CP schematic RTL8201CP reference Design RTL8201cp schematic Design smd m7 diode smd diode M7 M7 smd diode FERRITE TRANSFORMER ee RD1-125BAG1A MAG-JACK
Contextual Info: TOP Ver. 1.2 NM7010B+ Datasheet NM7010B+ Datasheet 2007 WIZnet Co., Inc. All Rights Reserved. For more information, visit our website at http://www.wiznet.co.kr 0/19 © Copyright 2007 WIZnet Co., Inc. All rights reserved. Data Ver. 1.0 OCTOBER , 2006 Ver. 1.1