A13B 5 PIN Search Results

2SA1386

Abstract: 2SA1386A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1386 2SA1386A Silicon PNP P o w er Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to

DQ25A

Abstract: DQ20A DQ18A
Contextual Info: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green

a13b 5 pin

Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
Contextual Info: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next

Contextual Info: ^77. DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D. MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : • Sensitive logic input protection ■ Microprocessor based equipment ■ Audio / Video inputs

Contextual Info: CYM1461 r^ Y D P F Q C SEMICONDUCTOR 512Kx 8 Static RAM Module Features Functional Description • High-density 4-m egabit SRAM module T h eC Y M 1461isahigh-perform ance 4-m eg ab itstaticR A M m o d u leorganizedas 512K w ords by 8 bits. This m odule is con­

A13B

Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Contextual Info: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits

SSOP20 300 mil Footprint

Abstract: 74HC04 IEC1000-4-2 SSOP20
Contextual Info: EMIF09-02726Sx  Application Specific Discretes A.S.D.TM EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required : Computers and printers Communication systems Mobile phones MCU Boards SO-20 DESCRIPTION

DQ20A

Abstract: A17a DQ18A be2a A13B
Contextual Info: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits

A13B

Abstract: FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 DALC208SC6 SC74 DALC SOT23-6
Contextual Info: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs Portable electronics

A13B

Abstract: DALC208SC6 DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9
Contextual Info: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs

A17a

Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Contextual Info: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]

A17A

Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Contextual Info: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]

A12B

Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for

dallas ds1280

Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for

9114 static ram

Abstract: dallas ds1280 a17b 68-PIN DS1280 DS1280Q-68 TD1220
Contextual Info: » A L L A S SEMICONDUCTOR CORP 31E D B HblMlBO 0003*133 0 ES DAL O S 1280 • W toàia^ M M éa^ M ni iii ii ì r -iiiJL.V^-r ¿ « .,- Mt. -«h. . '.riti , , tM . \* ^ * 5 0~7 E i£ a « a 081280 DALLAS 3-Wire to Bytewide Converter Chip semiconductor

SN10

Abstract: SN13 a12b
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

HMP31GF7AFR4C

Abstract: SN10 SN13 1x2 demux
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

hynix DDR2 800 1GB SO DIMM

Abstract: HMP564F7FFP8C
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

HYMP151L72CP4

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that