DQ4A Search Results

C2004A

Abstract: KM48C2104A C2104A C2104 km48v2104a
Contextual Info: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

A17a

Abstract: A21A A18A MCP market MB84VY6A4A1 MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A
Contextual Info: New Products MB84VY6A4A1 2-Bus Type PS-MCP Mounted with 6 Memory Chips MB84VY6A4A1 The world first PS-MCP ＿ Package ＿ Stacked M CP with a 2-bus configuration, ＿ mounted with 4 memory chips for a cellular phone application block and 2 memory chips for a baseband block. MB84VY6A4A1 is configured with 328M bits

octal tri state buffer ic

Abstract: CXK77B1840AGB CXK77B3640AGB SA10 SA11 SA12 SA14 2N218 369 42 sony
Contextual Info: SONY CXK77B3640AGB / CXK77B1840AGB 4Mb Late Write HSTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 37/38/4/45 Preliminary Description The CXK77B3640A (organized as 131,072 words by 36 bits) and the CXK77B1840A (organized as 262,144 words by 18 bits)

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SR A M integrates input registers, high speed R A M , output registers/latches, and a one-deep write

20a power supply circuit diagram

Abstract: M79018DX
Contextual Info: DESCRIPTION . -••y The M79004PX-20A & -24A are 512 words by 9 bits, clocked, static Dual Port Random Access Memory DPRAM devices with 200 ns and 240 ns access times, respectively. They can be viewed as a shared memory in that any cell can be accessed from either of two ports. Each port is totally independent from the other. All address, data, and read/write

Contextual Info: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics „ Single 1.8V read, program and erase (1.70V to 1.95V)

CXK77B3640GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SRA M integrates input registers, high speed R A M , output registers/latches, and a one-deep write

Contextual Info: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification

TAA 611 T12

Abstract: x48 chipset IDT72T6360 IDT72T6480 D25N3
Contextual Info: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag

Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: STI641004G1-60G 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC ^HPC 60ns 17ns 104ns 25ns The Simple Technology STI641004G1-60G is a 1M x 64 bits Dynamic RAM high density memory module. The Simple

CXK77B3640GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

CXK77B3641GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM , output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

octal tri state buffer ic

Abstract: sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

octal tri state buffer ic

Abstract: sony CXK77B1841AGB CXK77B3641AGB SA10 SA11 SA12 SA14
Contextual Info: SONY CXK77B3641AGB / CXK77B1841AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 33/37/5/6 Preliminary Description The CXK77B3641A (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits)

LDM-1A

Contextual Info: PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module Benefits  %RDUGDUHDVDYLQJVZLWKVXUIDFH Z ZL PRXQWIULHQGO\SLWFK PP

L9D3256M32DBG2

Contextual Info: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 999 x9FHQWHUWHUPLQDWHGSXVKSXOO ,2  x3DFNDJHPP[PP[PP

m78004

Abstract: m78004p dq2ac "Dual-Port RAM" M79018DX-15 M79004PX-20A dual port ram
Contextual Info: a t. t & t ilELEC . DESCRIPTION The M79004PX-20A & -24A are 512 words by 9 bits, clocked, static Dual Port Random Access Memory DPRAM devices with 200 ns and 240 ns access times, respectively. They can be viewed as a shared memory in that any cell can be accessed from either of two ports. Each port is totally independent from the other. All address, data, and read/write

M78004PX-20A

Abstract: M78004PX20A "Dual-Port RAM" M79018DX-15 UL A8A
Contextual Info: The M78004PX-20A & -24A are 512 words by 8 bits, clocked, static Dual Port Random Access Memory DPRAM devices with 200 ns and 240 ns access times, respectively. They can be viewed as a shared memory in that any cell can be accessed from either of two ports. Each port is totally independent from the other. All address, data, and read/write

Contextual Info: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag

Contextual Info: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag

TAA 611 T12

Abstract: 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9
Contextual Info: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag