A10B Search Results

Contextual Info: UPD4564163G5-A10B-9JF IL08 C-MOS 64 M 1 M WORD x 16-BIT x 4 -BIT DRAM —TOP VIEW— 1 VDD DQ0 2 3 QVDD GND 54 53 DQ15 QGND 52 INPUT A0 - A13 CAS CKE CLK DQ1 4 51 DQ14 CS DQ2 5 50 DQ13 LDQM 6 QGND QVDD 49 DQ3 7 48 DQ12 DQ4 8 47 DQ11 9 QVDD QGND 46 DQ5 10

Contextual Info: RS ITEM NO 209-232 APEM ITEM NO A10BP240N LED/Multiled Neon Optimum voltage V 240V Intensity Mounting Size 14mm Rectifier - Reverse Voltage Mounting Finish Prominent AC current - Protection IP67 DC current - Mount Holder Black Voltage Tolerance(%) 10% Chip Qty

1Mx16x4

Abstract: 54TSOP PC100 54-TSOP UPD4564163G5-A10B
Contextual Info: SYNCHRONOUS DYNAMIC RAM 64M DENSITY • SYNCHRONOUS 64M DRAM, 3.3V, 4K REFRESH, 54PIN TSOP PACKAGE 64M SYNCHRONOUS DYNAMIC RAM • • • • • • • • • Part Number µPD4564441G5-A10B µPD4564441G5-A10 µPD4564441G5-A80 µPD4564841G5-A10B µPD4564841G5-A10

Contextual Info: RS ITEM NO 210-939 APEM ITEM NO A10BP110N LED/Multiled Neon Optimum voltage V 110v Intensity Mounting Size 14mm Rectifier - Reverse Voltage Mounting Finish Prominent AC current - Protection IP67 DC current - Mount Holder Black Voltage Tolerance(%) 10% Chip Qty

dallas ds1280

Contextual Info: DALLAS SEMICONDUCTOR DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT FEATURES • Adapts JEDEC bytewide memory to a 3-wire serial port GCCDÜC CEI*- * A2B NC NC NC A3R A3B A4R A4B A5R A5B A6R A6B A7R A7B A8R A8B A9R A9B A10R A10B A11R NC NC NC • 68-pin version provides arbitration mechanisms for

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

smd e2b

Abstract: 101SX 8026EKW t20yp TYA sfernice 2103P 8038EKP pot0102 3102P Vishay Copal
Contextual Info: CROSS REFERENCE Trimmers VISHAY T TRIMMER CROSS REFERENCE PART NUMBER SUPPLIER VISHAY CROSS PACKAGE TYPE ORDER CODE PACKAGE QUANTITY MOQ COMMENTS 170 VRN T7RYB, T7YB TUBES D 06 50 200 T7R WATER SEALED, T7 DUST SEALED 171 VRN T7RYA, T7YA TUBES D 06 50 200 T7R WATER SEALED, T7 DUST SEALED

9114 static ram

Abstract: dallas ds1280 a17b 68-PIN DS1280 DS1280Q-68 TD1220
Contextual Info: » A L L A S SEMICONDUCTOR CORP 31E D B HblMlBO 0003*133 0 ES DAL O S 1280 • W toàia^ M M éa^ M ni iii ii ì r -iiiJL.V^-r ¿ « .,- Mt. -«h. . '.riti , , tM . \* ^ * 5 0~7 E i£ a « a 081280 DALLAS 3-Wire to Bytewide Converter Chip semiconductor

R5F5631

Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

7x5 dot matrix led displays

Abstract: arduino uno ASM117 28BYJ-48 mg995 ASM117-3 28BYJ48 4x4 matrix keypad in pic with c code PIC16F877A manual PIC 24C16
Contextual Info: PPIC IC DDevelopment Board Ultra 2 IC + Arduino UNO USER'S GUIDE WIDE.HK page 2 PIC Development Board Ultra 2 Table of content Introduction Connectivity Introduction to PIC . . . . . . . . . . . . . . . . . . . . . . . . . . . .03 PIC sockets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

a13b 5 pin

Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
Contextual Info: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next

RF 351

Abstract: multi format memory card reader KPS seven segment display SMC62 AC97 AT32AP7001 AVR32 Pin connection of bk 1085 HS 153 SP "BANDGAP REFERENCE" cross
Contextual Info: Features • High Performance, Low Power AVR 32 32-Bit Microcontroller • • • • • • • • • • • • • • • • • – 210 DMIPS throughput at 150 MHz – 16 KB instruction cache and 16 KB data caches – Memory Management Unit enabling use of operating systems

E014

Abstract: upd4564163g5a10b
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

MC-4516DA72F-A10

Abstract: MC-4516DA72F-A10B MC-4516DA72F-A80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 Rev. E are assembled.

Contextual Info: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache

U14A3

Contextual Info: Enhanced IV f e m o iy S y s te m s DM4M32SJ 4Mb x 32 Enhanced DRAM SIMM In c . Product Specification Features A rchitecture The DM4M32SJ achieves 4Mb x 32 density by mounting • Integrated 2,048 x 32 SRAM Cache Row Register Allows 12ns Access Random Reads Within the Page

Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

bv228

Abstract: S1C33210 S1C33L01 MF1517-01 CP4D
Contextual Info: MF1517-01 CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33210 Technical Manual S1C33210 PRODUCT PART S1C33210 FUNCTION PART NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

ATMEL 910

Abstract: atmel910 SMC911 hsb 772 p interface bluetooth with AVR ptz decoder AC97 AT32AP7000 AVR32 rf mems switch
Contextual Info: Features • High Performance, Low Power AVR 32 32-Bit Microcontroller • • • • • • • • • • • • • • • • • • • – 210 DMIPS throughput at 150 MHz – 16 KB instruction cache and 16 KB data caches – Memory Management Unit enabling use of operating systems

Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 4 Kbyte Data Cache, 4 Kbyte Instruction Cache, Write Buffer

gps tracker circuit diagram

Abstract: dc-dc PID 13 smr 40000c circuit marking m3 transistor 6249C VID 200-12 S4 DSI LCD TFT FM Stereo Decoder Integrated Circuit BA 758 N7E50-7516VY-20 ptz decoder
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • • • – DSP Instruction Extensions, Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer

MC-4516CC725

Abstract: MC-4516CC725FA-A10B M168S-50A91
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CC725 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: µPD4564841 Rev. E are assembled.

a10b

Abstract: ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64S 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64S is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128163 are assembled.

MC-454CB645FA-A10B

Abstract: MC-454CB645
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M SDRAM : µPD4564163 Rev. E are assembled.