A13A Search Results

D175

Abstract: B535 k 016 c945 p 2B51 91AB A13A C929 BD 761
Contextual Info: 86.-6 @B2;9<91AB?5 >=D5? ?5:1E 6JGTURJS R R R R R R R R R t9<5 {?`lsceefjc t9<5 {?`lfbbdbbfe 3=<A13A 41A1 3=9: q?>D13D 1BB1>75=5>D co^ cq cbb= \1D co h-rq] u?<4 @<1D54l eb= \1D co h-rq] q?>D13D B5C9CD1>35 q?>D13D =1D5B91< ho dgb-oqaeb-rq z1H` CG9D389>7 F?<D175

Contextual Info: 865./ ;9<91AB?5 8978 >=D5? :1A389<7 ?5:1E 6IFTURIS ~ 8=C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ MZq5bgknla \nkk^gm \ZiZ[bebmr :<7C69fl ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1 ~ Onmebg^ Fbf^glbhglA 09757 q :757 q 87591ff 3=<A13A 41A1 3=9: EhgmZ\m ZkkZg`^f^gm

Contextual Info: 86,/6*: ;9<91AB?5 8978 >=D5? :1A389<7 ?5:1F 6KHVWTKU ^ ^ ^ ^ Hdg` Oj5AG8:;<8> C 4 5 ^ ^ ^ ^ ^ ^ Ppogdi` Fdh`indjinA /9@57 s 895> s 8<5>0 hh Hdg` Oj5A88=@:; Hdg` Oj5AERE8;77987;<9@ 3=9: 3=<A13A 41A1 8C3 8E 877h h\s5/\o 8C =WFE0 CbTiP9 Ejio\^o \mm\ib`h`io Ejio\^o m`ndno\i^`

CHN 747

Abstract: MOCN CHN 648
Contextual Info: 86./64 ;9<91AB?5 >=D5? ?5:1F 6KGWXUKV _ _ _ _ _ _ _ _ _ _ Hcf_ Oi4 @ G799:>7 C 4 5 Hcf_ Oi4 @ :6699<: Hcf_ Oi4 @ S;67:?99: Hcf_ Oi4@ERE766686:?7<8 3=<A13A 41A1 3=9: Eihn[]n [ll[ha_g_hn 7C Oi aif^ jf[n_^@ 766g g[r4 Iif^ jf[n_^@ ;6g g[r4 Eihn[]n S_mcmn[h]_

6C46

Abstract: E24ED BC 459 91AB A13A 2e65 4e24 bd 872
Contextual Info: 86.-6 @B2;9<91AB?5 >=D5? ?5:1E 6JGTURJS R R R R R R R R R t:=6 {@`lsceefjc t:=6 {@`lfbbdbbfe 3=<A13A 41A1 3=9: q@?E24E 2CC2?86>6?E co^ cq cbb> \2E co h.rq] u@=5 A=2E65l eb> \2E co h.rq] q@?E24E C6D:DE2?46 q@?E24E >2E6C:2= ho dgb.oqaeb.rq z2I` DH:E49:?8 G@=E286

91AB

Abstract: A13A DF2E 662D
Contextual Info: 86.-6 @B2;9<91AB?5 >=D5? ?5:1E 6JGTURJS R R R R R R R R R t:=6 {@`l sceefjc C 4 5 t:=6 {@`l fbbdbbfe t:=6 {@`l q~qbkbbdbegbid 3=9: 3=<A13A 41A1 q@?E24E 2CC2?86>6?E co^ cq cbb> \2E co h.rq] u@=5 A=2E65l eb> \2E co h.rq] q@?E24E C6D:DE2?46 q@?E24E >2E6C:2= ho dgb.oqaeb.rq

A13A

Abstract: GDAY 5A931
Contextual Info: A=,. AE>5 8978 A5;>5?1AB?5 85?;5A931:E @51:54 ?5:1E 86/-EZVijgZh | @bW^Zci iZbeZgVijgZ XVc WZ 5<4 | G^\] VbW^Zci Veea^XVW^a^in | GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg 1;295<A 141>A129:9AE 3=<A13A 41A1 @bW^Zci iZbeZgVijgZ w:9 Gjb^Y^in id 5<4 =< ,}84 828 `MV

df2e

Abstract: HH2C DE65 CQ 765
Contextual Info: 86.-6 @B2;9<91AB?5 >=D5? ?5:1E 6JGTURJS R R R R R R R R R t:=6 {@`l sceefjc C 4 5 t:=6 {@`l fbbdbbfe t:=6 {@`l q~qbkbbdbegbid 3=9: 3=<A13A 41A1 q@?E24E 2CC2?86>6?E co^ cq cbb> >2I` \2E co h.rq] q@?E24E C6D:DE2?46 ho dgb.oqaeb.rq z2I` DH:E49:?8 G@=E286 fbb.oq a cdg.rq

Contextual Info: 86,.6 ;9<91AB?5 9<A5?;5491A5 >=D5? ?5:1F 6LHYZWLX Heha Ok5AG8:;?8 f f f f f f f Heha Ok5AS<78<;<8? Heha Ok5AERE7@7797:779? /FE pula0 ERE7@7797:779@ /CE pula0 3=<A13A 41A1 3=9: Ekjp]_p ]nn]jcaiajp 8C38E Ekjp]_p naoeop]j_a 9C39E 877i i]t5/]p 8C =WFE0 Ekjp]_p i]pane]h

GK transistor

Abstract: I F462 91AB Z649 A13A BHEC DF2E
Contextual Info: 86.-6 @B2;9<91AB?5 >=D5? ?5:1E 6JGTURJS R R R R R R R R R t:=6 {@`l sceefjc C 4 5 t:=6 {@`l fbbdbbfe t:=6 {@`l q~qbkbbdbegbid 3=9: 3=<A13A 41A1 q@?E24E 2CC2?86>6?E co^ cq cbb> \2E co h.rq] u@=5 A=2E65l eb> \2E co h.rq] q@?E24E C6D:DE2?46 q@?E24E >2E6C:2= ho dgb.oqaeb.rq

Contextual Info: DS92LV1260 DS92LV1260 Six Channel 10 Bit BLVDS Deserializer Literature Number: SNLS134E DS92LV1260 Six Channel 10 Bit BLVDS Deserializer General Description Features The DS92LV1260 integrates six deserializer devices into a single chip. The chip uses a 0.25u CMOS process technology. The DS92LV1260 can simultaneously deserialize up to

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR35Hxxx-WC 16K 32K 64K 128K ●General Description BR35Hxxx-WC is a SPI BUS interface method serial EEPROM. ●Features „ High speed clock operation up to 5MHz(Max.) „ 2.5V to 5.5V single power source operation most suitable for

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

nt5tu128m8de-ac

Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266

NT5TU32M16AG-37B

Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
Contextual Info: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8

NT5TU32M16CG-BD

Abstract: NT5TU32M16CG-be NT5TU64M8CE
Contextual Info: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4

Z86C61

Abstract: Z86E61 Z86E63
Contextual Info: P R E L I M I N A R Y Z86E61/E63 Z8 MCU 16K/32K EPROM WITH PRELIMINARY PRODUCT SPECIFICATION Z86E61/E63 CMOS Z8® 16K/32K EPROM MICROCONTROLLER FEATURES • 8-Bit CMOS Microcontroller ■ High Voltage Protection on High Voltage Inputs ■ 40-Pin DIP, 44-Pin PLCC Style Packages

TMP91P640N-10

Abstract: ZP27 TMP91P640E-10 TMP91C640 TMP91P640N ZIP11 TMP91P640E TMP91P640F-10 TMP91P640 Z1P13
Contextual Info: T O S H IB A TMP91P640 CMOS 8-BIT MICROCONTROLLERS TMP91P640E - 10 /TMP91P640N - 10/TMP91P640F - 10 1. OUTLINE AND CHARACTERISTICS The TMP91P640 is a system evalution LSI having a built in EPROM or One-Time PROM for TMP91C640 or TMP90C840A. A programming and verification for the internal PROM is achieved by using a

HM-65796

Abstract: 536X4
Contextual Info: 4TE D • SöböMSb GGD1E4S 1Ö4 ■ H f l HS MA T R A Preview IM III UwW m ÊM M H S September 1990 ^ ^ 6 -2 3 -/0 HM 65796 DATASHEET 64 K x 4 WITH SEPARATE I/O HIGH SPEED CMOS SRAM AND TRANSPARENT WRITE FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

S98WS512

Contextual Info: S98WS512PE0FW005 Stacked Multi-chip Product MCP 512 Mbit (32M x 16-Bit) Stacked Burst Mode, Simultaneous Read/Write Flash Memory with 256 Mbit (16M x 16-bit) Mobile SDRAM on Shared Bus S98WS512PE0FW005 Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G2, S34ML02G2, S34ML04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Standard Products UT8R256_16 256K x 16 SRAM Advanced Data Sheet August 21, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state