A1241 TRANSISTOR Search Results

A1241

Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Contextual Info: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0

transistor a1241

Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor a1241

Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor a1241

Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)

a1241 semiconductor

Abstract: transistor a1241 a1241
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor a1241

Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

transistor a1241

Abstract: a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

transistor a1241

Abstract: transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ