A022 Search Results
A022 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| DPA02257RGBR | Texas Instruments | Low Input Voltage, 6A Synchronous Step-Down SWIFT Converter for DDR Memory Termination 20-VQFN -40 to 85 |
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| TPS7A0223PDQNR | Texas Instruments | 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 4-X2SON -40 to 125 |
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| TPS7A0228PDQNR | Texas Instruments | 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 4-X2SON -40 to 125 |
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| TPS7A0223PDBVR | Texas Instruments | 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 5-SOT-23 -40 to 125 |
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| TPS7A0228DQNR | Texas Instruments | 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 4-X2SON -40 to 125 |
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A022 Price and Stock
TE Connectivity 301A022-3/86-0Heat Shrink Boot - T Shape - Shell Size 22 - 0.520 (13.21mm)/0.272 (6.91mm) Large 0.520 (13.21mm)/0.272 (6.91mm) Small Dia - 2.311 (58.70mm) L. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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301A022-3/86-0 | 45 |
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301A022-3/86-0 | 1 |
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301A022-3/86-0 | 100 |
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FCL Components Limited NA02242-V05101RS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NA02242-V05101RS |
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TE Connectivity BMB2A0220AN4Ferrite Beads Multi-Layer 220Ohm 25% 100MHz 0.25A 0.5Ohm DCR 0805 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BMB2A0220AN4 |
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BMB2A0220AN4 | 4,000 |
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Microchip Technology Inc DSA612RA2A-022RVAO3-Output MEMS Automotive Clock Gen 4M 3.999996M 3.999999M |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DSA612RA2A-022RVAO |
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DSA612RA2A-022RVAO | Tube | 30 Weeks |
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FCL Components Limited NA02241-V05117 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NA02241-V05117 |
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A022 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advanced Control Com ponents 20 MERIDIAN ROAD EATONTOWN, N.J. 07724 PHONE: 732 460-0212 FAX: (732)460-0214 W W W.ADVANCED-CONTROL.COM Inc. PRODUCT SPECIFICATION PART NUMBER: ACDL-A022 DESCRIPTION: DETECTOR LOG VIDEO AMPLIFIER, DC COUPLED & CW IMMUNE FREQUENCY RANGE: |
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acdl-a022 | |
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Contextual Info: Issue No. : 12-SWDW-A022 October 30, 2012 Date of Issue : Classification : • New □ Change For General Distribution PRODUCT SPECIFICATION FOR APPROVAL Product Description Customers Part Number Product Part Number Country of Origin |
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12-swdw-a022ese11mv9t | |
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Contextual Info: Protection Relays & Controls ARC Detectors A0220 Description Arc Detecting Point Sensor The A0220 Arc Detector is a photo electric sensor. It has a sensitive area of 180˚. Sensor signal is a mA current signal of 0.5 mA / klux. The sensor includes 10 m of shielded |
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a0220d0100d0900d0910+3 | |
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Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bb53T31 a022b51 fi ■ BYV79 SERIES A 7 1 0 3 - 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times with very low stored charge and soft-recovery |
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bb53t31a022b51byv79t-03-17 | |
i800
Abstract: 97-0008 3069B 27i0
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3069-a02-a022-a032-a042+10 | |
7408, 7404, 7486, 7432
Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
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tgc10020-masink/12matdb10lj+14 | |
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Contextual Info: DRAW ING No.: M 4 0 - 4 0 1 IF IN D O U BT - A S K XX 4 6 R X B +0.20— NOT TO S C A LE 1 6 + 0 .0 5 .0+0.05 i LO o o +l LO O +l O CIRCUIT 1 0. 20 PHOSPHOR BRONZE SEMI-GLOSS TIN t LO <o o +1 -X2.Ç 0 .7 + 0 .0 5 - GO r A d 1.2+0.05- PCB LAYOUT ro X d X NO. OR |
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M40-4010446R
Abstract: M40-4012046R 40113 M40-4010346R M40-4010546R M40-4010646R M40-4010746R M40-4010846R M40-4011046R 401104
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m40-401ul94v-0m40-4010446rm40-4012046r+8 | |
VN10KContextual Info: VN10K Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN10K 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
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vn10ka022009 | |
2N7000Contextual Info: 2N7000 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7000 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain |
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2n7000a022009 | |
TN2124Contextual Info: TN2124 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2124 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain |
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tn2124a022009 | |
R5F5631
Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
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rx63nrx631100-mhz32-bit+13 | |
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Contextual Info: NECES001 C P20K 0 .8 -M IC R O N NEC Electronics Inc. fpgas February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Programmable Gate Arrays |
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neces001cp20kram8x16ram16x16+5 | |
EM78
Abstract: UIT660N elan EM78 EM78813 Usb m015 a006 c8051 microcontroller Workout 0X00 EM78815
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uit660nit660nem78elan em78+7 | |
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R5F51115AGFL
Abstract: R5F51113ADNF R5F51113ADFM
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rx11132-bit12-bitr01ds0190ej0120+4 | |
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Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by |
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rx63032-bitrx600r01uh0040ej0160 | |
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Contextual Info: HV20822 16-Channel High Voltage Analog Switch Features ► ► ► ► ► ► ► ► ► General Description HVCMOS technology for high performance 220V operating conditions Output on-resistance typically 22Ω 5.0V and 12.0V CMOS logic compatibility Very low quiescent current consumption 10µA |
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hv2082216-channel-45dbms-026+1 | |
IS49NLS18320Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency) |
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is49nls96400is49nls18320576mb533mhz+5 | |
BVA16
Abstract: BZV15 cx fuse A0420
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bzv15bzv16bzh13bzh14+8 | |
15nf
Abstract: PS25 PX0587 PX0588
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ps25/aps26/aps26/axxpx0587+4 | |
HY53C464LS
Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
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hy53c464330mil18pincmo442+9 | |
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Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing |
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w78m32v-xbx8mx32120ns13x22mm | |
10001000XXX
Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
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w78m32v-xbx8mx32120ns13x22mm+6 | |
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Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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tp2435dsfp-tp2435a022309 | |