X28C010M Search Results

x2864

Abstract: x28001 X28C010C x28c64
Contextual Info: ADVANCED INFORMATION 1M X28C010M Military 128K x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS —50 mA Active Current Max. —£¡00 ¡xA Standby Current Max. • High Speed Page Write Operation • Fast Write Cycle Times — 2156-Byte Page Size

X28C010D-15

Abstract: FN8105 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C010

Abstract: 37KW X28C010-20 X28C010-25 X28C010I X28C010M
Contextual Info: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed • No Erase Before Write • No Complex Programming Algorithms

GDIP1-T32

Abstract: F3262 INTERSIL LCC-32 12c772 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C0101

Abstract: FN8105 x28c010dmb-20 X28C010 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15
Contextual Info: X28C010 Data Sheet May 11, 2005 FN8105.0 5 Volt, Byte Alterable EEPROM Features The Intersil X28C010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C010 is a 5V only device. The

Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

lk 3058

Contextual Info: i m X28C010 1M 128K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages o r VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithm s

X28C010

Abstract: X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010 a8a16
Contextual Info: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: T05 Package transistor T04 X28C010 X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010
Contextual Info: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The