X28C010 Search Results

X28C010D-15

Abstract: FN8105 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C010

Abstract: 37KW X28C010-20 X28C010-25 X28C010I X28C010M
Contextual Info: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed • No Erase Before Write • No Complex Programming Algorithms

Contextual Info: XM28C040 4 Megabit Module 512K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components

Contextual Info: i m X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

X28C512

Abstract: A15C X28C010 X28C513 X28C512 xicor
Contextual Info: X u X28C512 512K a r 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Tw o PLCC and LCC P inouts — X28C512 — X28C010 E2PROM Pin C om patible — X28C513 — C om patible w ith Low er D e nsity E2PROMs

GDIP1-T32

Abstract: F3262 INTERSIL LCC-32 12c772 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C0101

Abstract: FN8105 x28c010dmb-20 X28C010 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15
Contextual Info: X28C010 Data Sheet May 11, 2005 FN8105.0 5 Volt, Byte Alterable EEPROM Features The Intersil X28C010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C010 is a 5V only device. The

Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

Contextual Info: i m X 2 8 C 5 1 2 /X 2 8 C 5 1 3 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs • Access Time: 120ns • Simple Byte and Page Write

Contextual Info: i X28C010 1M m 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

C 3856

Contextual Info: X28C512/X28C513 512K 64K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs • Access Time: 90ns • Simple Byte and Page Write — Single 5V Supply

L-TL-06

Contextual Info: KBac FACT SHEET 1M Commercial X28C010 128Kx8Bit Electrically Erasable PROM FEATURES • 200 ns Access Time • LOW Power CMOS —80 mA Active Current Typical —500 ju,A Standby Current Typical • Fast Write Cycle Times — 128-Byte Page Write Operation —Byte or Page Write Cycle: 5 ms Typical

Contextual Info: i&Br FACT SHEET 1M Commercial X28C010 128Kx8B it Electrically Erasable PROM FEATURES • 200 ns Access Time • LOW Power CMOS —80 mA Active Current Typical — 500 juA Standby Current Typical • Fast Write Cycle Times — 128-Byte Page Write Operation

X28C0101

Abstract: XICOR X28C010
Contextual Info: Haas ADVANCED INFORMATION 1M Commercial X28C010 _ _ Industrial_ X28C010I_ îZoK x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS — 53 mA Active Current Max. — 590 fxA Standby Current Max. • High Speed Page Write Operation

12-tz

Abstract: jis f07 X28C010 XM28C040
Contextual Info: X A dvance Inform ation 4 Megabit Module XM 28C040 iE f lr 512K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components

X28C010M

Abstract: jis f07 A12C X28C010 X28C010I X28C010-12
Contextual Info: X y X28C010 1M ü u 1 128 K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120 ns • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V PP Control Circuits — Self Timed — No Erase Before Write

Contextual Info: im X 2 8 C 5 1 2 /X 2 8 C 5 1 3 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs • Access Time: 90ns • Simple Byte and Page Write

semiconductor A15E

Abstract: x28c512
Contextual Info: im X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs * Access Time: 90ns * Simple Byte and Page Write — Single 5V Supply

Contextual Info: y ü X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120 ns * SIMPLE Byte and Page Write — Single S Volt Supply — No External High Voltages or Vpp Control

t3856

Abstract: X28C512-12 x28c512
Contextual Info: t e X28C512 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible — X28C513 — Compatible with Lower Density E2PROMs FEATURES • Access Time: 120 ns

X28C0101

Contextual Info: i m X28C010 1M 128K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits -S e lf-T im e d — No Erase Before Write — No Complex Programming Algorithms

X28C010

Abstract: XM28C040 XM28C040-20 XM28C040-25 XM28C040I XM28C040M XICOR X28C010
Contextual Info: XM28C040 XM28C040 4 Megabit Module 512K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components

Contextual Info: f 512K a X 2 8 C 5 1 2 /X 2 8 C 5 1 3 r 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts — X28C512 — X28C010 E2PROM Pin Compatible —X28C513 — Compatible with Lower Density E^PROMs • Access Time: 90ns • Simple Byte and Page Write

Contextual Info: XM28C040 4 Megabit Module 512K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components