VQ7254 Search Results

VQ3001

Contextual Info: lJì Supertex inc. TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information Standard Commercial Devices V ^ D S ON GS |ttl) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip*

VN0300M

Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
Contextual Info: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)

VQ7254P

Abstract: VQ7254 VQ7254J
Contextual Info: S iliconix H T-43> -IS VQ7254 SERIES inco rp orated N - an d P -C hannel E n h a n c e m e n t-M o d e M O S T ran sisto r Arrays 14-PIN DIP SIDE BRAZE PRODUCT SUMMARY T O P V IE W Dual-ln-Llne Package PART NUM BER V BR DSS (V ) rD S (O N ) Q l + Q2 or Q3 + Q4

VQ3001

Abstract: TQ3001 VQ3001N6 VQ7254 VQ7254N6 FAST DMOS FET Switches
Contextual Info: VQ3001 VQ7254 N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Ω 2.0V -3.0V VQ3001N6 20V 3.0Ω 2.0V -3.0V VQ7254N6 BVDSS / BVDGS Order Number / Package

MOSFET 923 54

Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
Contextual Info: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: VQ3001 P-Channel mosfet 40V TQ3001N7 20V P-Channel Power MOSFET DIODE S4 75a p mosfet VQ7254N7 VQ7254N6 DIODE S4 41
Contextual Info: TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 40V 3Ω 2.0V -3.0V VQ3001N6 VQ3001N7 20 Terminal LCC Quad VQ3001NF

TQ3001

Abstract: VQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1
Contextual Info: VQ3001 VQ7254 Supertex inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information V GS th R d S (ON) b v dss/ Order Num ber / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Î2 2.0V -3.0V VQ3001N6 20V 3.0Î2 2.0V

VQ7254J

Abstract: HA20
Contextual Info: JK!!gS& VQ7254J N- and P- Channel Enhancement-Mode _ MOS Transistor Array " T A V iS PRODUCT SUMMARY 14-PIN PLASTIC TOP VIEW r DS ON Q l + Q2 or V(BR)DSS Q3 + Q4 •d (V) (n ) (A) 2 0/-20 3 2 P-Channel N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

g2jf

Contextual Info: SILICONIX INC 18E D • fl5S4735 QQ14147 7 ■ VQ7254 SERIES .fiTSSgSCSS ' j I- UfZ. - 7 . ^ 5 1 1—^ ^ N- and P-Channel Enhancement-Mode M O S Transistor Arrays 14-PIN DIP SIDE BRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) Ql + Q2 or Q3 + Q4 TOP VIEW

VQ3001/VQ7254

Contextual Info: TQ3001 VQ3001 VQ7254 Surface Mount | N- and P-Channel Quad Power MOSFET Arrays Ordering Information R b v dss/ dS VGS th (ON) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad 40V 3Q

Contextual Info: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad

VP0300M

Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
Contextual Info: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT

Contextual Info: VQ7254P Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.7 Minimum Operating Temp (øC)-40õ

D413

Contextual Info: 1T&ÏSSSS5 VQ7254J N- and P- Channel Enhancement-Mode _MOS Transistor Array PRODUCT SUMMARY TOP VIEW 14-PIN PLASTIC r DS ON Qi + Q2 V (BR)DSS or Q3 + Q4 (V) (il) 20/-20 Dual-ln-Line Package Id (A) 2 3 D1 [ 7 Ti] D4 51 [ 7 13 ] S4 G1 [ 7

TQ3001

Abstract: TQ3001N7 VQ3001 VQ3001N6 VQ7254 VQ7254N6
Contextual Info: TQ3001 VQ3001 VQ7254 N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 40V 3.0Ω 2.0V -3.0V VQ3001N6 — 40V 3.0Ω 1.6V -2.4V — TQ3001N7 20V 3.0Ω

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

vp0300m

Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

BSR78

Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

VP0808M

Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation