VQ100 Search Results

VQ1000

Abstract: vq1000n6
Contextual Info: VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation BV dss / Order Num ber / Package b v dgs ^DS ON (max) ^D(ON) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5Q 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceram ic DIP Advanced DMOS Technology

VQ1006

Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

d2q transistor

Contextual Info: V Q 10 04 LJ S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BV dss / ^DS ON) Order Number / Package I d (ON) B V qcs (max) (min) Quad Ceramic DIP' 60V 3.5Ì2 1.5A VQ1004P Quad Plastic DIP

VN0808M

Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Contextual Info: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP

2N7000

Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

VQ1001J

Abstract: VQ1001P
Contextual Info: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D

VN0300M

Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
Contextual Info: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)

0808L

Abstract: s4 vishay VN0808L VN0808LS VQ1006P S3D21
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

VN0808L

Abstract: VN0808LS VQ1006P
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Abstract: VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad
Contextual Info: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 30V 1.0Ω 2.0A Order Number / Package Quad Ceramic DIP* VQ1001P * 14 pin side brazed ceramic DIP Advanced DMOS Technology High Reliability Devices

QF32

Abstract: FG320 FF668 BF957 FF1513 CP132 PQ100 FF1148 TQ144 TQ176
Contextual Info: TQFP VQFP TQ176 TQ160 TQ144 TQ100 22.0 x 22.0 mm 0.5 mm 26.0 x 26.0 mm (0.5 mm) 26.0 x 26.0 mm (0.5 mm) VQ64 12.0 x 12.0 mm (0.8 mm) 12.0 x 12.0 mm (0.5 mm) 9/18/07 16.0 x 16.0 mm (0.5 mm) VQ100 VQ44 MPM_1498_pmatrices_Q307_r1.qxd 22 16.0 x 16.0 mm (0.5 mm)

2n7000 equivalent

Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

2N7002 marking code 72

Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V

VQ1000N7

Abstract: A 933 S transistors VQ1000
Contextual Info: Supertexinc. VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVDSS/ R qS<ON b v dqs max) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5 ÎÏ 0.5A VQ1000N6 VQ1000N7 l0(0N) * 14 pin side brazed ceramic DIP

Contextual Info: VQ1001 Çj Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BVdss/ BVpcs 30V f*DS ON) Order Number / Package • c kon ) (max) (min) Quad Ceramic DIP* 1.0Î1 2.0A VQ1001P * 1 4 pin side b ra zed ceram ic D IP

VQ1001

Contextual Info: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7

1004J

Abstract: 2N6659 M 1004j
Contextual Info: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1

sis 962

Contextual Info: VQ1004 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss/ BV ogs 60V Order Number / Package •D ON n DS(ON) (max) 3.5Q (min) Quad Ceramic DIP* 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side b ra zed ceram ic D IP

code for 2n7002

Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

VQ1006P

Abstract: 0808L VN0808L VN0808LS
Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

DXT170-75-1

Abstract: DXT170-71-1 AXT661-1 AXT661-14A VQ110-5L-Q DXT170 AXT661-13ADC JISB8374-1993 VQ100 SOl-23
Contextual Info: 3 Port Solenoid Valve Series VQ100 Unprecedented high speed, stable response, and extra-long service life. ON: 3.5ms, OFF: 2ms, Dispension accuracy ±1ms With indicator light and surge voltage suppressor; supply pressure 0.5MPa 200million cycles or more (clean and dry air)

VQ1000

Abstract: VQ1000N6 VQ1000N7 HP215A
Contextual Info: VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5Ω 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceramic DIP Advanced DMOS Technology

VN0808M

Abstract: VQ1006P VN0808L
Contextual Info: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)