UPC8128TB Search Results

MARKING c2p

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES DESCRIPTION • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT CONSUMPTION: UPC8128TB; Icc = 2.8 mA t y p . @ 3.0 V UPC8151TB; Icc = 4.5 mA t y p . @ 3.0 V

upc 1478

Abstract: uPC 1163 nec marking power amplifier upc rfics marking 5 900MHZ UPC8128TB UPC8128TB-E3 UPC8151TB UPC8152TB 8128TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8128TB CELLULAR/CORDLESS TELEPHONES FEATURES GAIN vs. FREQUENCYand VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 Gain, GP dB • LOW CURRENT CONSUMPTION: Icc = 2.8 mA, TYP at 3.0 V • HIGH EFFICIENCY: P1dB = -4 dBm, TYP at f = 1 GHz

MARKING c2p

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT UPC8128TB; Icc UPC8151TB; Icc UPC8152TB; Icc • • UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

top marking c3

Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS >PC8128TB, ¡IPC8151TB, PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

CD 2399 GP

Abstract: ic cd 2399 gp ic cd 2399 go
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS liPC8128TB, /¿PC8151TB, pPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

UPC8128TB

Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

uc8151

Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

8151TB

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

az 10840

Abstract: tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A
Contextual Info: NEC's SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE TK • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) 1.3 ± 0.05 • SUPPLY VOLTAGE:

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

ic isl 887

Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
Contextual Info: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3

gp 752

Abstract: marking C2U
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

UPC8128TB

Abstract: UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C

nec marking power amplifier upc

Abstract: 900MHZ UPC8128TB UPC8151TB UPC8152TB UPC8152TB-E3 18 sot-363 rf power amplifier
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8152TB CELLULAR/CORDLESS TELEPHONES FEATURES 1.0 GHz Output Port Matching • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V GAIN vs. FREQUENCY and VOLTAGE • LOW CURRENT CONSUMPTION: Icc = 5.6 mA TYP at 3.0 V +30 VCC = 3.3 V

UPC8128TB

Abstract: UPC8151TB UPC8151TB-E3 UPC8152TB SOT-363* marking 1001 gp 823
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz

UPC8236

Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.