UPC8152TB Search Results

MARKING c2p

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES DESCRIPTION • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT CONSUMPTION: UPC8128TB; Icc = 2.8 mA t y p . @ 3.0 V UPC8151TB; Icc = 4.5 mA t y p . @ 3.0 V

MARKING c2p

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:

nec marking power amplifier upc

Abstract: 900MHZ UPC8128TB UPC8151TB UPC8152TB UPC8152TB-E3 18 sot-363 rf power amplifier
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8152TB CELLULAR/CORDLESS TELEPHONES FEATURES 1.0 GHz Output Port Matching • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V GAIN vs. FREQUENCY and VOLTAGE • LOW CURRENT CONSUMPTION: Icc = 5.6 mA TYP at 3.0 V +30 VCC = 3.3 V

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT UPC8128TB; Icc UPC8151TB; Icc UPC8152TB; Icc • • UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz

top marking c3

Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS >PC8128TB, ¡IPC8151TB, PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

CD 2399 GP

Abstract: ic cd 2399 gp ic cd 2399 go
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS liPC8128TB, /¿PC8151TB, pPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

UPC8128TB

Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz

uc8151

Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

upc 1478

Abstract: uPC 1163 nec marking power amplifier upc rfics marking 5 900MHZ UPC8128TB UPC8128TB-E3 UPC8151TB UPC8152TB 8128TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8128TB CELLULAR/CORDLESS TELEPHONES FEATURES GAIN vs. FREQUENCYand VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 Gain, GP dB • LOW CURRENT CONSUMPTION: Icc = 2.8 mA, TYP at 3.0 V • HIGH EFFICIENCY: P1dB = -4 dBm, TYP at f = 1 GHz

tk 1838

Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
Contextual Info: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V

az 10840

Abstract: tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A
Contextual Info: NEC's SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE TK • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) 1.3 ± 0.05 • SUPPLY VOLTAGE:

gp 752

Abstract: marking C2U
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V

UPC8128TB

Abstract: UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PC8128TB, μPC8151TB, μPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The μPC8128TB, μPC8151TB and μPC8152TB are silicon monolithic integrated circuits designed as buffer

PA90U

Abstract: buffer amplifier ghz UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3 UPC8179TB 2.4 GHz buffer amplifier top marking c3
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C