TTC007 Search Results
TTC007 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TTC007 | Toshiba | Transistors | Original | 193.99KB | 5 | ||
| TTC007 | Toshiba | Japanese - Transistors | Original | 266.73KB | 5 | ||
| TTC007 | Toshiba | TTC007 - TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3S1C, 3 PIN, BIP General Purpose Small Signal | Original | 194KB | 5 |
TTC007 Price and Stock
Toshiba America Electronic Components TTC007,LF(OTrans GP BJT NPN 50V 1A 1100mW 3-Pin TSM T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TTC007,LF(O | 3 | 3 |
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TTC007,LF(O | Cut Tape | 3,905 | 1 |
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| TTC007,LF(O | Tape & Reel | 3,905 | 100 |
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TTC007,LF(O | 28 Weeks | 3,000 |
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TTC007,LF(O | 21 Weeks | 3,000 |
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Metcal STTC-007Soldering Irons Cart. Conical Long 1mm(0.04 in) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STTC-007 |
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STTC-007 | Bulk | 1 |
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STTC-007 | Bulk | 1 |
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STTC-007 | 1 |
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Others STTC007-600201-001 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STTC007-600201-001 | 6 |
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TTC007 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TTC007Contextual Info: TTC007 東芝トランジスタ シリコンNPNエピタキシャル形 TTC007 単位: mm 高速スイッチング用 DC-DC コンバータ用 • 直流電流増幅率が高い。 : hFE = 400~1000 IC = 0.1 A • コレクタ・エミッタ間飽和電圧が低い。 |
Original |
ttc007645mm645mm2 | |
TTC007Contextual Info: TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) |
Original |
ttc007to1000 | |
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Contextual Info: TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) |
Original |
ttc007to1000 | |
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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Original |
sce0004lttc41162sc4118tta1586+16 | |
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
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Original |
scj0004rsc-432sc18152sc732tm+14 | |
2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
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Original |
bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+7 | |
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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Original |
2010/9sce0004ksc-432sc1815700the+10 | |
2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
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bce0016f2sa1941 amp circuit2sc33032sd880+7 | |
2sC5200, 2SA1943
Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
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ttc003sc-64bcj0016fbcj0016e+9 | |
SMD TRANSISTOR H2A NPN
Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
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smd transistor h2a npnamplifier circuit using 2sa1943 and 2sc5200marking smd pnp transistor wfa06 smd transistor+6 |