TPC8121
Contextual Info: TPC8121 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅤ TPC8121 ○ ノートブック PC 用 ○ リチウムイオン 2 次電池用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 •
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TPC8121
Contextual Info: TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS V TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)
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TPC8121
Abstract: 11-A0 toshiba marking code transistor
Contextual Info: TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS V TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)
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tpc812111-a0toshiba marking code transistor |
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025
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ene kb3926qf
Abstract: ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231
Contextual Info: 1 2 3 4 5 7 8 01 UT7D BLOCK DIAGRAM PCB STACK UP 8L CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /45W PAGE 3,4 LAYER 3 : IN1 CLK_CPU_BCLK,CLK_CPU_BCLK# LAYER 4 : SVCC CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# DREFCLK,DREFCLK#
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318mhzrj-45alprs355bmlf64pin+1627mhzpag2091u/10vpc206pr199pr200ene kb3926qfene kb3926qf d2kb3926qf a1ene kb3926qf c0kb3926qf c0kb3926qf d2kb3926apl*560692hp61b7x5at5231
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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bcj0082bbcj0082a2sk4207to220sis+8tpca*8023tk80a08k3tpc8119tk40a08k32sk4112ssm3j16fs2sk3568tpc8a03
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
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TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
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tk12a10k3tk12a10ktk33a60vtpca*8065+6tk40e10k3ssm6k407tutpca*8064tk6a65d equivalenttpca*8036tk100g10n1
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tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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bce0082atpc8118 equivalent replacementssm3j307tzener diode smd 071 a01 |
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TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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bcj0082dbcj0082ctk12a10k3tk25e06k3+8tk50e06k3atk20e60utpca*8065tj11a10m3ssm6j501nutpca8077tj9a10m3tk8a10k3
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ene kb3926qf
Abstract: ene kb3926qf d2 kb3926qf d2 kb3926 kb3926qf 0 261 230 099 bosch sensor kb3926qf c0 ME2N7002E webcam schematic BOSCH 0 281 003 004
Contextual Info: 1 2 3 4 5 7 8 UT6 BLOCK DIAGRAM PCB STACK UP 8L LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : SVCC DREFCLK,DREFCLK#
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318mhzrj-45alprs355bmlf64pin+14ps810127mhznb9p144euame2n7002epr108ene kb3926qfene kb3926qf d2kb3926qf d2kb3926kb3926qf0 261 230 099 bosch sensorkb3926qf c0webcam schematicbosch 0 281 003 004
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa970gt45f122tk13a60ugt30f1232sk4207gt30j124igbt gt30f123gt30f122gt30g1222sc5471igbt gt30j124
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004isc-432sc1815gt30j124+9smd transistor h2agt45f122tpcp8r01gt30f1232sc1815 smd typesmd marking 8l01h2a smd2sc54712sc5200 amplifiers circuit diagram
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ene kb3926qf
Abstract: ene kb3926qf d2 kb3926qf d2 kb3926 ene kb3926qf c0 kb3926qf Quanta qt6 KB3926 AT5 C833 apl*5606 H5PS5162
Contextual Info: 1 2 3 4 5 7 8 UT7 BLOCK DIAGRAM PCB STACK UP 8L LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : SVCC DREFCLK,DREFCLK#
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318mhzrj-45alprs355bmlf64pin+15ps810127mhznb9p144euame2n7002epr108ene kb3926qfene kb3926qf d2kb3926qf d2kb3926ene kb3926qf c0kb3926qfquanta qt6kb3926 at5 c833apl*5606h5ps5162
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa97045f122gt30f12430g12230f124igbt gt30f124gt30j124gt45f122gt30f123tpca*8023gt50n322
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