TP50N Search Results

TP50N06V

Abstract: MTP50N06V
Contextual Info: MOTOROLA O rder this docum ent by M TP50N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06V TM OSV™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

MTP50N06E

Abstract: TP50N06E diode 9.1 b3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high

TP50N

Contextual Info: £ j ï TP50N06L S T P 5 0 N 0 6 LFI SGS-THOMSON ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP50N 06L TP50N 06LFI . . . . . . . . . V dss RDS on Id 60 V 60 V < 0.0 2 8 Q. < 0.0 2 8 Q. 50 A 27 A TYPICAL R DS(on) = 0.024 Q.

TP50N06V

Contextual Info: SGS-THOMSON ï ULKgraMOeS £j TP50N06 TP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP50N 06 TP50N 06FI . . . . . . . . V dss RDS on Id 60 V 60 V < 0.0 2 8 Q. < 0.0 2 8 Q. 50 A 27 A TYPICAL R DS(on) = 0.022 Q. AVALANCHE RUGGED TECHNOLOGY

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

Contextual Info: MOTOROLA Order this document by TP50N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TP50N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

TP50N

Abstract: 06vl
Contextual Info: MOTOROLA Order this document by TP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TP50N06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

TP50N

Abstract: MPT8N10
Contextual Info: <8> MOTOROLA M C33091A High-Side TMOS Driver The MC33091A is a High-Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and

3055e

Abstract: SI9959 4P05 si9943 SI9945 69COM 2406M 25n05l s42d TP5N
Contextual Info: f i S ilico n i x Replacement Guide A M e m b e r o f th e T e m ic G ro u p LITTLE FOOT Replacement Guide P a rt N um ber C onfiguration Vds V D ata Sheet Page # r DS(on) (52) VGS = 10 V P-C hannel M OSFETs O n e Si9400 m ay rep la c e o n e o f th e following:

MTP3055EL

Abstract: MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10
Contextual Info: TT TMOS TMOS Power MOSFETs Logic Level Power MOSFETs ISOLATED TO-220 CASE 221D-02 MTA PREFIX T0-220AB CASE 221A-06 (MTP PREFIX TO-251* CASE 369-05 (MTD PREFIX) TO-252 CASE 369A-09 (MTD PREFIX) Logic level M O SFETs are fu lly en ha nce d w ith 5 volts applied to the gate.

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”