15VVGS Search Results

sot-223 body marking D K Q F

Contextual Info: O rder th is data sheet by MMFT1N10ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount M M FT1N10ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed

Contextual Info: b 3 b 7 2 S 4 D10 1 30 1 SDO • MOTb . _ > Order this data sheet MOTOROLA by MMDF2C05E/D S E M IC O N D U C T O R TECHNICAL DATA M edium Pow er Su rfa ce M ount Products MMDF2C05E Com plem entary Half-Bridge T M O S Field Effect T ran sistors Motorola Preferred Device

221A-06

Abstract: AN569 MTP10N40E 4803 mosfet 4801 MOSFET
Contextual Info: M O TO RO LA S E M IC O N D U C TO R T E C H N IC A L DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET M T P 10N 40E N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to_ withstand high energy in the avalanche mode and switch efficientlyT

MTP50N06E

Abstract: TP50N06E diode 9.1 b3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high

12N10E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP 12N 10E TM O S E-FET™ P o w er Field E ffe c t Tran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS on = 0.16 OHM

1N10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ransistor Medium Power Field Effect N-Channel Enhancement Mode Silicon Gate TMOS E-FET “ SOT-223 for Surface Mount M o to ro la P r e fe r re d D e v ic e M E D IU M P O W E R T M O S FET 1 AMP 100 V O LTS T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T