SI9939DY Search Results

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

Si4539DY

Abstract: Si6543DQ Si9939DY 51308
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

SI9952DY

Abstract: SI9952 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

SI9952DY

Abstract: SI9952 70137 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

SI9952DY

Abstract: SI9952 n-channel mosfet transistor P-channel power mosfet SO-8 SI4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

Si9939DY

Contextual Info: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V

Si9939DY

Contextual Info: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

Si9939DY

Contextual Info: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V

Contextual Info: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V

Contextual Info: Temic Silicon»:_ S.9939DY D ual E nhancem ent-M ode M O SFETs N- and P-Channel Product Summary V d s (V) rDS(on) ( ß ) I d (A) 0.05 @ VGS = 10 V ±3.5 0.07 @ VGs = 6 V ±3 0.08 @ VGs = 4.5 V ±2.5 0.10 @ VGs = - ±3.5 30 iov 0.12 @ VGS = —6V

Si4532DY

Abstract: Si4539DY Si9928DY Si9939DY Si9942DY Si9958DY P-channel
Contextual Info: Transistors Siliconix Complementary LITTLE FOOTR Devices 8-Pin SOIC Maximum Ratings rDS(on) (W) Part Number VDS (V) VGS = "10 V Si9928DY VGS = "2.7 V ID (A) Configuration 0.05 0 11 0.11 0.08 0 19 0.19 "5 "3.4 34 N-Channel P Ch P-Channel l 0.125 0.2 0.25

70611

Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Contextual Info: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a

SDCFB

Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

GS 069

Contextual Info: Temic SÌ9952DY S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V D S(V ) 25 N-Channel P-Channel I d (A ) r DS(on) (£2) -25 0 .1 0 @ V GS = 10V ± 3 .5 0.15 @ VGS = 4.5 V ± 2 .0 0.25 @ V gs = -1 0 V ± 2 .3 0.40 @ V gs = -4 .5 V

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

2n7000 complement

Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Contextual Info: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

P-Channel TrenchFET Power MOSFET SOT-23

Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

p-channel

Abstract: Si4558DY
Contextual Info: Tem ic Semiconductors S08 SOT23 TO39 DIP14 LITTLE FOOT continued •. y :'-* r }y if. Part Number Complementary LITTLE FOOT® Devices (SOIC 8) V a s* d t2 .7 V Id (A) GosflgnratioB 0.04 0.074 0.08 0.19 6 5 ±5 ±3.4 ±2.5 ±3 ±3.5 ±3.5 3.5 2.3 ±5.8