51308 Search Results

japan servo KH 56 lm

Abstract: Z324M LC7662 LC7867 Datasheet-03/japan servo KH 56 lm
Contextual Info: Ordering number : EN%5130 CMOS LSI LC78620E No. 3&5130 Compact Disc Player DSP Preliminary Overview The LC78620E is a CMOS LSI that implements the signal processing and servo control required by com pact disk players, laser disks, CD-V, CD-I and related products. The

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTK140N30P = 300V = 140A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTR48P20P RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200

IXTH20P50P

Abstract: IXTT20P50P IXTH20P50 20P50P ixtt 20P50P 20P50 250V 10A TF 106 ixth 20p50p
Contextual Info: IXTH20P50P IXTT20P50P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ

20P50P

Abstract: ISOPLUS247 mosfet 500v 10A IXYS DSE160-10A
Contextual Info: IXTR20P50P PolarPTM Power MOSFET VDSS ID25 RDS on = - 500V = - 13A ≤ 490mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500

IXFR140N30

Abstract: IXFR140N30P ISOPLUS247 1M300
Contextual Info: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Globespan ADSL Recommendations DigitalTelecom Features Molded EP7 SUGGESTED PAD LAYOUT 1 7 3 6 2 8 4 5 • Designed to meet IEC950 requirements for supplementary 250v isolation • Compatible with Globespan chip sets • Good total harmonic distortion characteristics

Contextual Info: IXTR90P10P PolarPTM Power MOSFET VDSS = ID25 = RDS on ≤ D P-Channel Enhancement Mode Avalanche Rated - 100V - 57A Ω 27mΩ G ISOPLUS247 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

ISOPLUS247

Abstract: ixys application note 250V 10A TF 106 20P50P
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR20P50P VDSS ID25 RDS on = - 500V = - 13A ≤ 490mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500

IXTT20P50P

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH20P50P IXTT20P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 500V - 20A Ω 450mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR90P10P VDSS ID25 RDS on = = ≤ - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR140N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

55a11

Contextual Info: SPECIFICATION CONTROL DRAWING TITLE 55A1132 Date THREE CONDUCTOR CABLE, SHIELDED, JACKETED, GENERAL PURPOSE, 600 VOLT 5-13-08 Revision D This specification sheet forms a part of the latest issue of Raychem Specification 55A. JACKET - RADIATION-CROSSLINKED,

Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXFN140N30P

Contextual Info: IXFN140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20

2CDS200912R0001

Abstract: 2CTB815101R0700 2CTB815101R1600 2CTB803853R2400 for OVR T1 1N 25 255 TS DC 24V double POLE MCB 2CTB803853R5600 for OVR T2 1N 40 275 P TS earthing calculation for commercial building 2CTB815101R8900
Contextual Info: Surge Protection Devices OVR Range, System pro M compact OVR PLUS N1 40 No upstream MCB or fuse required NEW OVR Range, System pro M compact ® Summary General points on lightning and its risks Causes of transient overvoltages . 2

HA11498

Abstract: TDA2640 HD7407P tda1060 TEA1009 KIA2206 TDA2591 tda2658 1V2 TUBE TDA3586
Contextual Info: Preface Welcome to the second edition of Television IC Data Files. Due to the falling price of consumer equipment, the first edition of this book, published in 1996, was conceived to help provide the repair engineer with a convenient, reliable source of information to aid speedy fault-finding. Not much has

LC7869

Abstract: sanyo Laser pickup 33.8688 MHz crystal oscillator clock cd player 513031 XTAL32M la9231m lc78
Contextual Info: Ordering number : EN*5130 CMOS LSI LC78620E Compact Disc Player DSP Preliminary Overview The LC78620E is a CMOS LSI that implements the signal processing and servo control required by compact disk players, laser disks, CD-V, CD-I and related products. The

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 90A Ω 25mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: IXTH90P10P IXTT90P10P
Contextual Info: IXTH90P10P IXTT90P10P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

ISOPLUS247

Contextual Info: IXTR90P10P PolarPTM Power MOSFET VDSS = ID25 = RDS on ≤ - 100V - 57A Ω 27mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTR48P20P

Abstract: 48P20P ISOPLUS247
Contextual Info: IXTR48P20P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200

2CTB815101R0300

Abstract: 2CTB815101R0800 2CTB803953R0500 2CTB803953R1800 2CTB803851R1200 2CTB803953R1400 2CTB803951R1300 2CTB815101R0700 2CTB803854R1200 2CTB803950R0100
Contextual Info: Main catalogue System pro M compact OVR surge protective devices 1TXH000083C0201.indb 1 07/03/2011 10:19:32 OVR PLUS N1 40 and OVR PLUS N3 40 NEW Residential 1TXH000083C0201.indb 2 Commercial Industrial 07/03/2011 10:19:43 System pro M compact® OVR surge protective devices

Contextual Info: IXTT90P10P IXTH90P10P PolarPTM Power MOSFETs VDSS ID25 = = ≤ RDS on - 100V - 90A Ω 25mΩ D P-Channel Enhancement Mode Avalanche Rated G TO-268 (IXTT) S G S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ