IXFR140N30P Search Results

IXFR140N30P Datasheets (1)

Filter by Manufacturer

IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR140N30P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A ISOPLUS247	Original	PDF		5

IXFR140N30P Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXFR140N30P Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFR140N30P				1	1 $25.10 10 $25.10 100 $18.32 1000 $17.36 10000 $17.36	Get Quote
Mouser Electronics	IXFR140N30P		8			1 $32.05 10 $23.16 100 $23.16 1000 $19.91 10000 $19.91	Buy Now
Newark	IXFR140N30P	Bulk	294		1	1 $29.75 10 $23.88 100 $18.00 1000 $16.83 10000 $16.14	Buy Now
TTI	IXFR140N30P	Tube			300	1 - 10 - 100 - 1000 $18.60 10000 $18.60	Buy Now
Future Electronics ()	IXFR140N30P	Tube		37 Weeks	300	1 - 10 - 100 - 1000 $22.89 10000 $22.89	Buy Now
	IXFR140N30P	Tube		37 Weeks	300	1 - 10 - 100 $23.19 1000 $22.89 10000 $22.89	Buy Now
Littelfuse Inc IXFR140N30P DiscMosfetN-CH HiPerFET-Polar ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFR140N30P	Bulk		8 Weeks	30	1 - 10 - 100 $28.49 1000 $26.21 10000 $26.21	Get Quote
Onlinecomponents.com	IXFR140N30P					1 - 10 - 100 $40.60 1000 $14.82 10000 $14.82	Buy Now

IXFR140N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR140N30 Abstract: IXFR140N30P ISOPLUS247 1M300 Contextual Info: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfr140n30p 200ns isoplus247 e153432 +4140n30p 5-13-08-b ixfr140n30 1m300	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR140N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfr140n30p 200ns isoplus247 e153432 +2140n30p 5-13-08-b	PDF
IXFR140N30 Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode	Original	140n30p isoplus247tm 405b2 ixfr140n30	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF
Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 70 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	140n30p isoplus247tm ixfr140n30p	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF
IXFB100N50P Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P Contextual Info: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the	Original	plus264 isoplus247tm e153432 ixfb100n50p +9ixfn60n80p ixfk44n80p ixfk64n60p fast diode sot-227 ixfn100n50p ixfb60n80p ixfk80n50p ixfx44n80p ixfn82n60p	PDF