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    SI4949EY Search Results

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    Vishay Siliconix

    Vishay Siliconix SI4949EY

    DUAL ENHANCEMENT-MODE MOSFET (N-/P-CHANNEL) Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI4949EY 5,500
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    SI4949EY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si4949EY

    Abstract: A244V
    Contextual Info: Si4949EY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 60 P-Channel –30 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.053 @ VGS = –10 V "5.1 0.095 @ VGS = –4.5 V "3.8 D1 D1 S2 SO-8 S1 1 8 D1


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    si4949eys-49520--rev18-dec-96a244v PDF

    TAG 600

    Abstract: SI4949EY tag 6 600 TAG D2 tag 625 600
    Contextual Info: Si4949EY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 60 P-Channel –30 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.053 @ VGS = –10 V "5.1 0.095 @ VGS = –4.5 V "3.8 D1 D1 S2 SO-8 S1 1 8 D1


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    si4949eys-49520--rev18-dec-96tag 600+3tag 6 600tag d2tag 625 600 PDF

    Si4949EY

    Contextual Info: Si4949EY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 60 P-Channel –30 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.053 @ VGS = –10 V "5.1 0.095 @ VGS = –4.5 V "3.8 D1 D1 S2 SO-8 S1 1 8 D1


    Original
    si4949eys-45847--rev13-nov-95 PDF

    AMP PBT GF15 3 pin

    Abstract: AMP MT CONNECTOR POWER SUPPLY BOARD 94V-0 INPUT POWER SECTION OF DESKTOP MOTHERBOARD motherboard power management Magic computer motherboard pcb and components POWER SUPPLY BOARD 94V0 AMP PBT connector AMP PBT GF16 3 pin
    Contextual Info: Magic Packet Adapter Card Implementation Application Note ABSTRACT This application note discusses the various aspects of Magic Packet adapter card design. It is recommended that this application note be used in conjunction with the Magic Packet Technology


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    0381a10base-t100base-tam186+13am386am486am29000amp pbt gf15 3 pinamp mt connectorpower supply board 94v-0input power section of desktop motherboardmotherboard power managementmagiccomputer motherboard pcb and componentspower supply board 94v0amp pbt connectoramp pbt gf16 3 pin PDF

    p-channel

    Abstract: Si4558DY
    Contextual Info: Tem ic Semiconductors S08 SOT23 TO39 DIP14 LITTLE FOOT continued •. y :'-* r }y if. Part Number Complementary LITTLE FOOT® Devices (SOIC 8) V a s* d t2 .7 V Id (A) GosflgnratioB 0.04 0.074 0.08 0.19 6 5 ±5 ±3.4 ±2.5 ±3 ±3.5 ±3.5 3.5 2.3 ±5.8


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    dip14si9529dysi9928dysi9942dy+7si9958dysi9952dysi4558dysi4949eysi9939dysi4532dyp-channel PDF

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


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    opa340paads7816p12-bit200khz+15opa2337paads7822pina125uaopa680uopa547frtd pt100 interface to 805124v 20a siemens battery chargerlm2560smd 58a transistor 6-pinpic 16f84 pwm circuitscr control light intensity using 80518051 microwave ovendesign of fm transmitter final year projectproject pic 16f84 pwmwhite led" 5mm PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    wn1053wn1087-18rwn1087-tr1wn1090+16wn1125wn1142wn1158-tawn1165-tr1wn1170wn934temic k153ptshf5471tfmw5380dn1328tdsr5156dn904tdsr5153hs0038 ir sensortlvd4900tcdf1910 PDF

    s49e

    Abstract: si4949
    Contextual Info: SÌ4949EY VI^HWW Siliconix Dual Enhancement-Mode MOSFET N-/P-Channel Product Summary tedr DS(on) ( ^ ) Id (A) 0.055 @ V GS = 10 V ± 4 .5 0.075 @ V GS = 4.5 V ± 3 .9 0.053 @ V Gs = - 1 0 V ±5.1 0.095 @ V Gs = - 4 .5 V ±3.8 V d s (V ) N-Channel ,X xvv:v


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    4949eys-49520--ec-96s49e+1si4949 PDF