STH4N90 Search Results

TCA 2025 b

Abstract: transistor v63 TCA 2025 STH4N90 STH4N90FI 0C183
Contextual Info: Zu SGS-THOMSON S TH 4 N90 S TH 4 N9 0 FI « M L Iig T T IM O tS S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH4N90 STH4N90F! dss 900 V 900 V R DS on Id < 3.2 Q < 3.2 Q 4.2 A 2.7 A . TYPICAL RDS(on) = 2.9 Q . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

AVALANCHE TRANSISTOR 2n

Abstract: STH4N90 STH4N90FI
Contextual Info: 7 = 12 1 53 7 □ 0 4 5 f l b cï b? S • S 6 T H SGS-THOMSON ilLI gTO*S STH4N90 STH4N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TY P E V dss RDS(on Id a . . ■ . . . . 900 V 900 V a CM CM CO CO V V STH4N90 STH4N90FI 4.2 A 2.7 A TYPICAL RDS(on) = 2.9 i l

STH4N90

Abstract: STH4N90FI
Contextual Info: STH4N90 STH4N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH4N90 STH4N90FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 3.2 Ω < 3.2 Ω 4.2 A 2.7 A TYPICAL RDS(on) = 2.9 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: 7 = 12 1 53 7 □ 0 4 5 f l b cï b? S • S 6 T H STH4N90 STH4N90FI SGS-THOMSON ilLI gTO*S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TY P E V dss RDS(on Id a . . ■ . . . . 900 V 900 V a CM CM CO CO V V STH4N90 STH4N90FI 4.2 A 2.7 A TYPICAL RDS(on) = 2.9 i l

Contextual Info: * jj SGS-THOMSON STH4N90 STH4N90FI IM N - CHANNEL EN H A N C EM EN T MODE PO W ER M OS TR A N SISTO R TYPE STH4N90 STH4N90FI V dss R d S{oh Id 900 V 900 V 3 .2 £2 3 .2 LI 4 .2 A 2.7 A . • . . ■ . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

7N90FI

Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
Contextual Info: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000