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    STB567 Search Results

    STB567 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STB-567
    APD Semiconductor STABISTORS DO-35 Case Scan PDF 61.58KB 1
    STB567
    Codi Semiconductor FORWARD REGULATOR (Multi - Pellet) DIODES Scan PDF 69.77KB 1
    STB567
    General Electric Semiconductor Data Book 1971 Scan PDF 464.63KB 1
    STB567
    General Electric Semiconductor Data Handbook 1977 Scan PDF 468.51KB 2
    STB567
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 112.62KB 1
    STB567
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 67.81KB 1
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    STB567 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STB568

    Abstract: Voltage Regulator Diodes STB-568 STB567 STB-567
    Contextual Info: STABISTOR DIODE STB567 STB568 STB569 Multi-Pellet Forward Voltage Regulator Diodes DESCRIPTION Consisting of 2, 3 or 4 diodes in series, these low cost controlled conductance devices can be used as low voltage regulator diodes or to maintain a bias on the output transistor of push-pull


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    stb567stb568stb569voltage regulator diodes+2stb-568stb-567 PDF

    Voltage Regulator Diodes

    Abstract: STB-567
    Contextual Info: UNITRODE CORP 9347963 UNITRODE 92D CORP 1 1294 DT-03-Ô? STABISTOR DIODE STB567 STB568 STB569 Multi-Pel let Forward Voltage Regulator Diodes FEATURES » Metalurglcal Bond DESCRIPTION Consisting of 2, 3 or 4 diodes in series, these low cost controlled conductance


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    dt-03-stb567stb568stb569+4400mw67mw/ecvoltage regulator diodesstb-567 PDF

    SS321

    Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
    Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package


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    ma1703ma1704ss321ss322+9ss324ss325ss334ss337se708dz800d07 15dt230ahpixp2350adt PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


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    ma1703ma1704ss321ss322+13ss324ss325ss334ss337se708dz800ss321 equivalentdiode 1n91481n43071n4532diode 1n36052n2222 chip2n2369 transistor PDF

    A114D

    Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
    Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)


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    ma1703ma1704ss321ss322+13ss324ss325ss334ss337se708dz800a114da114fdt230bdt230fstb-568ger4007a114n PDF

    BZ102 diode

    Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
    Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.


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    d73713s1n8161n3896ap3897+14ap3898ap4829ap4830bz102/0v7bz102/3v4bzx75c1v4bz102 diodetransistor c 6090bz102bzx75c2v1diode bzx75c3v6bzx75c3v6bzx75c-1v4bzx75-c1v4 PDF

    BZX75C2V8

    Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
    Contextual Info: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac­ teristics. They are offered with reference


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    1n829 noise

    Abstract: 1N4828 codi C6301 1N5476B 1N457 JANTXV 1N5530B DO35 1N4830 diode ZENER A21 1N457
    Contextual Info: C O U SEMICONDUCTOR INC SSE D • 1775M7Ü OODObS4 4 mCOVI it; ill * J Hi CODI Semiconductor, Inc. Serving the industry for over 2 5 years. CODI was born in 1959 as Computer Diode Corporation it's name was changed in 1973 to CODI CORPORATION . CODI Semiconductor, Inc. is CODI's operating arm. For


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    1N48 diode

    Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
    Contextual Info: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •


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    1n41561n41571n48291n4830+141n5179mpd200mpd300mpd400do-35400mw1n48 diodebzx75c1v4bzx75c3v6bzx75-c2v1bzx75c-1v4bz102 diode1n481n816 PDF

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82 PDF

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400 PDF

    D035

    Abstract: Bv 42 transistor STB567 D035 package 1N4150 1N4450 1N4606 1N4607 1N460B DT230C
    Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 Ir Vf @ 25°C Max. 1 <nA) Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package T»pe Package Outline No.


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    100/ia1n41501n44501n4606+10100/ta1n445i1n46071n460bdt230cdt230hd035bv 42 transistorstb567d035 package PDF

    BZX75C

    Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
    Contextual Info: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference


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    73713sdo-35800nsecbzx75c+9bz102 diode1n816 diodebzx75c1v4g129 stabistor1n816bzx75-c2v1ap2361bzx75c-1v4bz102 1v4 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    TRANSISTOR 2n3901

    Abstract: MPD300 mpd200 1N4156 2N2368 2N3973 1N4150 1N4450 1N4606 1N460B
    Contextual Info: SIGNAL DIODES 100 - 200 MA TYPES 200 - 400 MA TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


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    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n PDF

    BZX75C2V1

    Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
    Contextual Info: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500


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    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114ba100 diodeba102aay20b2m1-51n2528ph1021oa210 diodediode aa116bb105gaz17 PDF