S1787 Search Results

S1787

Abstract: S1787-04 S1787-08 S1787-12
Contextual Info: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide

S1787

Abstract: S1787-04 S1787-08 S1787-12 S178704
Contextual Info: PHOTODIODE Siフォトダイオード S1787シリーズ 低暗電流プラスチックパッケージ受光素子 S1787シリーズは 暗電流を低く抑えたプラスチックパッケージのフォトダイオードです。 遮光性プラスチックパッケージのため、

S1787

Abstract: S1787-04 S1787-08 S1787-12
Contextual Info: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide

Contextual Info: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

S5557

Abstract: S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S3407

Abstract: SS493 S3407-01
Contextual Info: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne

Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

S1133-02

Abstract: S1133-05 lk 46 PD-60 S1133 S1133-03 S1133-12 S2357 D107-P PD61
Contextual Info: - 258 - I £ typ.15 typ.15 typ.40 typ.1.15 _ - ? ÍJ i EV tlx 100 100 100 100 100 100 100 100 100 100 100 100 100 100 m 100 100 100 ÏD max ínA¡ 0.01 0.01 0.02 U.Ol 0.02 0.01 0.02 0.02 0.02 0.01 0.01 0.02 0.01 0.02 typ.D.Dl typ.0.01 typ.0.03 0.1 Vr V)

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

IFR 840

Abstract: IFR 730 S2386
Contextual Info: Si Photodiodes ScM3Ctra> Packags Type No. ' : -i Hinge i, X I f - t»rm -‘hot-. füdk S6nsitiv‘iv Seaisitviiy S Ws\ E-lefigth Xp iiwh - to NEP iA/W) IPA? ' ÍPA) Time 1 Teiminai Shunt tr Capsjcitartee Resistance 101O 90% f i t Sh V-rí) V V M )V Vr =; tOonV

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800