RZB12100Y Search Results

Contextual Info: N AMER PHILIPS/DISCRETE fc.fc.53131 0015233 3 OLE » RZB12100Y L r-s s - i< r PULSED MICROW AVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications, It operates in pulsed conditions only and is recommended fo r IFF applications.

RZB12100Y

Contextual Info: 1 ^ - 3 3 - 1 5 RZB12100Y M A IN T E N A N C E T Y P E PHILIPS i n t e r n a t i o n a l 5L.E T> 7 H 0 û 2 ti 004fcibil4 4ti M P H IN PULSED M IC R O W A V E P O W E R T R A N SIST O R N PN silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

MX0912B250Y

Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

RZB12100Y

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bfa53*i31 00152fl3 3 H ~ “ Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

1B200Y

Abstract: MRB11040W
Contextual Info: 68 RF/Microwave Devices M icrow ave Transistors, Pulsed Power cont. Type No. Package Outline (V) tp @ (us) 40 40 40 40 40 40 40 40 24 40 40 24 50 45 50 50 50 50 50 50 50 50 50 50 50 50 50 vcc f (GHz) Duty Cycle Pl TTC (% ) (W) GP (dB) (% ) 100 100 100 100