BFA53 Search Results

RELE 12V

Abstract: HOLT INC ECG805 ECG806
Contextual Info: PHILIPS 17E E C G INC D bfa531Hfl 0QD3S4Û ECG805 H E T Y P E E C G 8 0 5 provides th e fun ctio n o f a n i-f gain block and is designed fo r use in c o m ­ m u n ications a n d f-m receivers. T T h e device consists o f a three-stage lim itin g am p li­

BUP22C

Abstract: BUP22 BUP22B
Contextual Info: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

RZB12100Y

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bfa53*i31 00152fl3 3 H ~ “ Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.

JY marking transistor

Abstract: Transistor 5331 MRB11080Y
Contextual Info: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates

Contextual Info: bfa5312fl QDG354fl 3 17E D PHILIPS E C G INC ECG805 T-77-05-07 l-F GAIN BLOCK WITH VOLTAGE REGULATOR semiconductors n p H E T Y P E E C G 8 0 5 provides the function of an i*f gain block and is designed for use in com* munications and f-m receivers. LOW l-F

BDT29

Abstract: BDT29B BDT30 TIP29 c4060
Contextual Info: 11 N AMER PHILIPS/DISCRETE 25E D • bfa53131 GQlTbSB Ô ■ BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.

Contextual Info: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization

Contextual Info: '- N AMER PHILIPS/DISCRETE 5SE D • 11 bb53=131 003271=] 5 ■ BYV143 SERIES ,[ 7 ? 0 3 -f t SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

T-33-73

Abstract: BUT21C BUT21B IEC134 BUT21
Contextual Info: ESE D N AMER PHILIPS/DI SCRETE • II titiS3T31 0010035 T '' BUT21B BUT21C T - S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a T0-220 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control

BUZ84

Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

ECG1373

Contextual Info: PHILIPS E C G INC 17E bhS3Tafl 0005201 T Features • Incorporating pro tectio n circuits surge, th e rm a l p ro tectio n, etc. • A u to m a tic operating point stabilizer circuit -07Q"r ( 1*8 ) • Low d istortion, lo w l / f noise • Low shock noise fro m p o w e r O N , OFF

ECG740A

Abstract: ECG740
Contextual Info: PHILIPS E C G 17E D INC ECG740A Audio Power Amplifier Sem iconductors A U D I O PO W ER A M P L IF IE R JL n A n } r *> INDEX PIN M O.D3 _1 _L FEATURES! • Low Distortion • Low Q uie sce n t Current • 34dB Internally Fixed G a in • H igh Input Impedance

Contextual Info: BRIGHT LED ELECTRONICS CORP. BF-A53BJRD SINCE 1981 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity. 7. Direct drive common anode. 12.50 .492 8

pcf8582a

Abstract: PCF8582D 24 SIGNETICS PCF8572 PCA8582B PCF8570 PCF8571 PCF8581 PCF8582E PCF8598
Contextual Info: NAPC/ SIGNETICS bbS3ci54 00bS23? 45E D Slgnetics l2C Peripherals for Microcontrollers 1 «SIC3 Preliminary specincallon 1024 x 8-bit static C M O S EEPRO M w ith l2C -b us interface P C F8598 T -Y 6 -/3 -2 1 FEAT U RES GENERAL DESCRIPTION • Low Power CMOS

bfa53

Abstract: Philips ECG 978 ECG978
Contextual Info: PHILIPS E C G INC 17E D • bbSBTSÖ G00447S ’ ECG Semiconductors ECG978 DUAL TIMING CIRCUIT 14 13 12 I I FEATURES: • • 10 9 8 f .280" 7.ll TIMING FROM MICROSECONDS THROUGH HOURS OPERATES IN BOTH ASTABLE AND M ONO­ STABLE MOOES • ADJUSTABLE DUTY CYCLE

Contextual Info: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL,

Contextual Info: 1^53=131 QDia?t7 7 • DEVELOPMENT DATA II This data sheet contains advance information and specifications are subject to change without notice. BUS131 SERIES N AUER P H I L I P S /DISCRETE T 25E D - 3 3 - / 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast

0q011

Abstract: DAD02 74LS364 wf034 SCN2672 sc82673 SCN2672TC5A44 scb2673 keyboard controller 8048 signetics 2673
Contextual Info: NAPC/ SI6NETICS Signetics sìe ì> • basais1* oossaia i SCN2672T Programmable Video Timing Controller PVTC Product Specification Microprocessor Products DESCRIPTION The Signetics SCN2672T Programmable Video Timing Controller (PVTC) is a programmable device designed for use

SCC2691AC1N24

Abstract: diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312
Contextual Info: S'îE D NAPC/ SIGNETICS Signetics bbS3T24 GDSSIST 1 .7=7Sr-37-ar SCC2691 Universal Asynchronous Receiver/Transmitter UART Product Specification Communications and Industrial Products Group c PIN CONFIGURATIONS DESCRIPTION FEATURES The Signetics SCC2691 Universal Asyn­

RZ3135B15W

Abstract: RZ3135B30W
Contextual Info: -L_L N AMER ObE PHILIPS/DISCRETE D bbS3T31 DDlS5ti3 a RZ3135B15W RZ3135B30W PULSED POWER TRANSISTORS FOR S-BAND RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 G H z . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

DIODE m1

Abstract: m3062 BYQ27
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE D • b b S B T B l 'oQSeaflS H M I - BYQ27 SERIES JL 7 T Q 3 -/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

BUZ356

Abstract: T0218AA BUZ-356
Contextual Info: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BZY91-C75R

Abstract: BZY91 BZY91-C75 BZY91-C7V5 BZY91-C7V5R C51 diode
Contextual Info: N AMER PHILIPS/DISCRETE 2SE » MAINTENANCE T Y P t n lli :«, ^ 53^31 0022077 1 B b ^ Y y i SfcKltfS A REGULATOR DIODES Also available to B S 9305-F052 A range o f diffused silicon diodes in DO-5 metal envelopes, intended fo r use as voltage regulator and

BDX62

Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
Contextual Info: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,