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    BUZ84

    Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
    Contextual Info: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		buz84q0147qet-39-13bixz84+3t03 package transistor pin dimensionsbu184transistor 13-h PDF

    BUZ84

    Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
    Contextual Info: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance


    OCR Scan     		buz84tts3131t-39-13q0147qe+5t03 package transistor pin dimensionsv103 transistorv103transistor t03buz84 ma PDF