f3055l
Abstract: FP3055LE
Contextual Info: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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rfd3055lerfd3055lesmrfp3055le150i2+81e-3006e-322e-748e-377e-555e-3f3055lfp3055le
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f3055l
Abstract: FP3055LE u603 RFP3055LE TA49158
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE inter«! D a ta S h e e t N o vem b er 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b e r 4 0 4 4 .3 Features • 11 A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process
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rfd3055lerfd3055lesmrfp3055leta49158+6107c26-s26an7260f3055lfp3055leu603
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f3055l
Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes
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rfd3055lerfd3055lesmrfp3055leta49158+7f3055lfp3055lef3055fp3055fp3055lan9321rfd3055lesm9a
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f3055l
Abstract: FP3055LE f3055 RFP3055LE
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes
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rfd3055lerfd3055lesmrfp3055lef3055l+2fp3055lef3055
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f3055l
Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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rfd3055lerfd3055lesmrfp3055leta49158+9tb334f3055lf3055fp3055lef3055l datasheetan9322fp3055datasheet fp3055len-channel enhancement mode power mosfet 8a 60v
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f3055l
Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
Contextual Info: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN
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rfd3055lerfd3055lesmrfp3055leo-220ab+10o-251aa1e-3006e-3f3055lfp3055lef3055fp3055rfd3055lesm9arfp3055an7254
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FP3055LE
Abstract: f3055l
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes
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rfd3055lerfd3055lesmrfp3055leta49158+2fp3055lef3055l
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F3055L
Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes
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rfd3055lerfd3055lesmrfp3055leta49158+7f3055lfp3055lefp3055f3055an9321rfd3055lesm9atb334
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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Complementary MOSFETs buz11
Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k49223complementary mosfets buz11irfd120power mosfet selection guidehrf3205mosfet selection guideirfp440buz71 irfd120hrf3205 equivalentirf610 complementaryirfd110
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mosfets
Abstract: Power MOSFETs MOSFET ESD Rated RFD14N05L
Contextual Info: I- — POWER MOSFETsfS LOGIC LEVEL POWER MOSFETs PAGE
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rfd3055lerfd3055llsmrfp3055lerfd3n08l+9rfd3n08lsmrfd14n05lrfd14n05lsmrfp14n05lrfd14n06lrfd14n06lsmmosfetspower mosfetsmosfet esd rated
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12SnOFC
Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Contextual Info: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
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huf75343p3huf75542p3huf75631p3huf75645p3+16huf75939p3huf76107p3huf76132p3huf76143p3huf76419p3huf76432p312snofcbq37pmc-90pmc-90 leadframe materialmkt-to220b03fdp3672hrf3205 equivalent mosfet numbertamac4a105 transistorhrf3205 equivalent
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HRF3205 equivalent
Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
Contextual Info: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0041001-a0030402-arfd14n05rfd14n05lsm9a+14rfd16n05rfd16n05smrfd3055lerfd3055smrfg70n06rfp45n06hrf3205 equivalenthuf75343s3rfp70n06100cbuz11huf75344p3huf75329d3strfd16n05lsm9a
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158std2n52stp2na60buz102 equivalentssh6n80rfp60n06replacement for irl2203nbuz91 equivalentrfp60n06leirfp460 cross referencebuz91a equivalent
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irf540n irf640
Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S
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buz11buz71buz71abuz72a+16hrf3205hrf3205shrfz44nhuf75307d3huf75307d3shuf75307p3irf540n irf640irf630 complementaryirf840 complementaryirf630 irf640irf730 complementaryirfp460 complementarymosfet irf540n complementarycomplementary mosfets buz11irf9540 complementaryirfp250 irfp460
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RFD14N05 spice
Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
Contextual Info: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance
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hrf3205hrf3205shrfz44nhuf75229p3+14huf75307d3huf75307d3shuf75307p3huf75307t3sthuf75309d3huf75309d3srfd14n05 spicehuf76343hrf3205 equivalenthuf75623p3mosfet s1ahuf76645p3rf1k49093rfp70n06
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir
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rh-24v
Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
Contextual Info: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
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rfg70n06rfp45n06hrf3205huf75307d3st+16huf75309d3shuf75309t3sthuf75321d3sthuf75321s3str4908huf75329d3strh-24vjesd22-a105a105 transistorhuf75309d3sthrf3205 equivalentjesd22-a110rfd3055lesm9arfp70n06transistor a105100c
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HUF75309D3ST
Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
Contextual Info: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0030402-aclinf75345p3huf75345s3strfd14n05+16rfd14n05lsm9arfd16n05rfd16n05smrfd3055lerfd3055smrfg70n06huf75309d3sthrf3205 equivalentrfd3055lesm9arfp70n06huf75344p3100cbuz11rfp50n06rfd16n05lsm9arfp50n06 reference
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IRF510N
Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Contextual Info: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5
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ms-012aats-001aamo-169abrf1k49090+16rf1k49093rf1k49092rf3s49092smrf3v49092rf1k49223rf1k49088irf510nmosfet selection guidepower mosfet selection guideirfr110nhrf3205 equivalentrfd7n10lesmirfd110irfd9120irfp9150irfu9220
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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buz10buz11buz11abuz71+16buz71abuz72abuz80airf520irf530irf540ssh6n80rfp60n06irf3205 irbuk417-500aesfp70n03buz91a2sk2717stmicroelectronicsbuz22ixfh13n50
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MC0628R
Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
Contextual Info: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB
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st42091f50188enb5f00974abt646cmsa+1674abt646cmsax74abt646cmtc74abt646csc74ac251sj74ac299sjx74ac74cwmc0628rmc0628mc0628r replacementfairchild semiconductorfairchild crosska3846fdd8896 "drop-in replacementfqpf3n60cfqp50n06 equivalentfds8884
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MC0628R
Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
Contextual Info: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference
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scyb017at74alvc3237474cbtlv16211sn74cbtd16211+14sn74sstv16859sn74cbtlv16211grdrsn74alvc16245agrdr-sn74sstv16859gkermc0628r4037374hc14n equivalent4046 application note philipshcf4060behcf4017besn74121 application notemc74hc373dwmc0628hcf4053be
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
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