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HUF75321S3ST Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HUF75321S3ST		Fairchild Semiconductor	35 A, 55 V, 0.034 ohm, N-Channel UltraFET Power MOSFET	Original	PDF	235.68KB	10
HUF75321S3ST		Intersil	MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin	Original	PDF	133.49KB	9
HUF75321S3S/T		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

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Rochester Electronics LLC HUF75321S3ST N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUF75321S3ST	Bulk	18		18	1 - 10 - 100 $16.67 1000 $16.67 10000 $16.67	Buy Now
Fairchild Semiconductor Corporation HUF75321S3ST Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUF75321S3ST		18		1	1 - 10 - 100 $0.40 1000 $0.33 10000 $0.29	Buy Now

HUF75321S3ST Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology	OCR Scan	HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB O-263AB	PDF
75321p Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm Contextual Info: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75321P3, HUF75321S3S 75321p HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm	PDF
HRF3205 equivalent Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A Contextual Info: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.	Original	0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A	PDF
75321p Abstract: DIODE 709 1334 AN9321 HUF75321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321 Contextual Info: HUF75321P3, HUF75321S3, HUF75321S3S S E M I C O N D U C T O R 31A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 31A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced	Original	HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 1-800-4-HARRIS 75321p DIODE 709 1334 AN9321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321	PDF
Contextual Info: HUF75321P3, HUF75321S3S interrii D a ta S h e e t 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75321P3, HUF75321S3S AN7260.	PDF
75321p Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Contextual Info: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75321P3, HUF75321S3S 75321p HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334	PDF
rh-24v Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C Contextual Info: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will	Original	RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C	PDF
HUF75309D3ST Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference Contextual Info: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.	Original	0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference	PDF
Contextual Info: HUF75321P3, HUF75321S3S Semiconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75321P3, HUF75321S3S HUF75321P 10e-3 72e-2 67e-2 30e-1 49e-1	PDF
75321P Abstract: 75321S Contextual Info: HUF75321P3, HUF75321S3S interrii Data S heet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs um fy' These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75321P3, HUF75321S3S HUF7S321P3, HUF75321S3S AN7254 AN7260. 75321P 75321S	PDF
75321p Abstract: 75321S HUF75321 410E1 Contextual Info: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor November 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology	OCR Scan	HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB 330mm 100mm 75321p 75321S 410E1	PDF
Contextual Info: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75321P3, HUF75321S3S	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
75321p Abstract: AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay Contextual Info: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75321P3, HUF75321S3S 75321p AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay	PDF