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    onsemi HUF75321P3

    Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME HUF75321P3 92 1
    • 1 $1.91
    • 10 $1.32
    • 100 $1.32
    • 1000 $1.32
    • 10000 $1.32
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    Avnet Americas HUF75321P3 Tube 27 Weeks 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.57
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    Mouser Electronics HUF75321P3 134
    • 1 $2.48
    • 10 $1.57
    • 100 $1.06
    • 1000 $0.77
    • 10000 $0.69
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    Newark HUF75321P3 Bulk 350
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.01
    • 10000 $0.92
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    Bristol Electronics HUF75321P3 30 1
    • 1 $1.88
    • 10 $1.88
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.75
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    Rochester Electronics HUF75321P3 1 1
    • 1 -
    • 10 -
    • 100 $0.79
    • 1000 $0.66
    • 10000 $0.59
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    Chip 1 Exchange HUF75321P3 1,100
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    Avnet Silica HUF75321P3 28 Weeks 50
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    EBV Elektronik HUF75321P3 21 Weeks 50
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    Master Electronics HUF75321P3 8
    • 1 $0.63
    • 10 $0.63
    • 100 $0.57
    • 1000 $0.55
    • 10000 $0.53
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    Fairchild Semiconductor Corporation HUF75321P3

    MOSFET N-Channel 55V 35A (Tc) TO-220-3 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75321P3 6,831 1
    • 1 -
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    • 100 $0.79
    • 1000 $0.66
    • 10000 $0.59
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    ComSIT USA HUF75321P3 650
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    Fairchild Semiconductor Corporation HUF75321P

    55 V, 35 A, 34 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HUF75321P 450
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    75321P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    75321p

    Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm
    Contextual Info: 75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75321p3huf75321s3s75321phuf75321s3st+3ta75321tb334relay 6v 200 ohm PDF

    75321p

    Abstract: DIODE 709 1334 AN9321 HUF75321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321
    Contextual Info: 75321P3, HUF75321S3, HUF75321S3S S E M I C O N D U C T O R 31A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 31A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		huf75321p3huf75321s3huf75321s3shuf75321+61-800-4-harris75321pdiode 709 1334an9321huf75321s3stta75321 PDF

    75321p

    Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334
    Contextual Info: 75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75321p3huf75321s3s75321phuf75321s3st+2ta75321tb334 PDF

    75321P

    Abstract: 75321S
    Contextual Info: 75321P3, HUF75321S3S interrii Data S heet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs um fy' These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		huf75321p3huf75321s3shuf7s321p3an7254+3an726075321p75321s PDF

    75321p

    Contextual Info: 75321P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ Features • 35A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		huf75321p375321p PDF

    75321p

    Contextual Info: 75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		hufa75321p3hufa75321s3s75321p PDF

    75321p

    Abstract: HUFA75321P3 HUFA75321S3S HUFA75321S3ST TA75321 TB334 98-CA
    Contextual Info: 75321P3, HUFA75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		hufa75321p3hufa75321s3s75321phufa75321s3st+3ta75321tb33498-ca PDF

    75321p

    Abstract: 75321S HUF75321 410E1
    Contextual Info: 75321P3, HUF75321S3, HUF75321S3S Semiconductor November 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		huf75321p3huf75321s3huf75321s3shuf75321+6o-263ab330mm100mm75321p75321s410e1 PDF

    Contextual Info: 75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75321p3huf75321s3s PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    75321p

    Abstract: AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay
    Contextual Info: 75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75321p3huf75321s3s75321pan9321+5an9322huf75321s3stta75321tb334saber relay PDF

    75321p

    Abstract: TF 321s 321S HUFA75321P3 HUFA75321S3S HUFA75321S3ST TA75321 TB334
    Contextual Info: 75321P3, HUFA75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 321P UFA 321S ubjec 35A, V, 034 hm, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		hufa75321p3hufa75321s3s75321ptf 321s+4321shufa75321s3stta75321tb334 PDF

    75321p

    Abstract: JCN7
    Contextual Info: 75321P3, HUF75321S3S S em iconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		huf75321p3huf75321s3s72e-267e-2+630e-149e-1huf75321p10e-375321pjcn7 PDF