PZT2222 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 „ ORDERING INFORMATION Ordering Number

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

PN2222A

Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
Contextual Info: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223

MMBT2222A

Abstract: PN2222A PZT2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

PZT2907AT1

Abstract: Transistor BFR 35 PZT2222AT1 PZT2222AT1G PZT2222AT3G
Contextual Info: PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features

SOT-223 P1f

Abstract: on semiconductor p1f p1f sot-223 PZT2222AT1 sot223 P1F onsemi SOT-223 PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2907AT1
Contextual Info: PZT2222AT1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PZT2222A Features • • • Surface Mount SOT- 223 Package Capable of 350mWatts of Power Dissipation ICM: 0.6A

Contextual Info: PZT2222 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: PZT2222AT1 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZT2222A TRANSISTOR NPN FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR NPN SOT-223 FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: UTC PZT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE

PZT2222A

Abstract: PZT2222A-AA3-R PZT2222AL-AA3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 *Pb-free plating product number: PZT2222AL

Contextual Info: PZT2222A SOT-223 Transistor NPN 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — — Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage

Contextual Info: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 „ ORDERING INFORMATION Ordering Number

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PZT2222A Features • • • Surface Mount SOT- 223 Package Capable of 350mWatts of Power Dissipation ICM: 0.6A

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PZT2222A Features • • • • Surface Mount SOT- 223 Package Capable of 350mWatts of Power Dissipation

PZT2222A

Abstract: PZT2907A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A SOT-223 TRANSISTOR PNP FEATURES y y 1 1. BASE Epitaxial planar die construction Complementary PNP Type available(PZT2222A) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

PZT2222

Abstract: PZT2222A PZT2907 PZT2907A
Contextual Info: PZT2222 / PZT2222A PZT2222 / PZT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 6.5 3 Power dissipation Verlustleistung ±0.2 1.65 ±0.1 Plastic case Kunststoffgehäuse

Contextual Info: PZT2222A, PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Contextual Info: PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features

P2T2222

Abstract: P2T2 PZT2222 PZT2222A
Contextual Info: 7 1 1 0 0 2 b G O b ' ^ b l Tfi3 • P H I N PZT2222 PZT2222A SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a microminiatureSMD envelope SOT-223 , primarily intended for linear and switching applications. PNP complements are PZT2907/2907A.