PH5415
Abstract: ph54 h541 PH5416
Contextual Info: PH5415 PH5416 PHILIPS INTERNATIONAL 5bE J> • 711Dfl2b D O M S S 4 4 033 M P H I N 3 7 -^ / 7 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage smali-signal transistors, prim arily intended fo r use in telephony applications and encapsulated in a T O -92 envelope.
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Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 DD2fl044 471 IAPX r n o ^ io PH5416 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors, primarily intended fo r use in telephony applications and encapsulated in a TO-92 envelope. QUICK REFERENCE DATA
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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50N240
Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30
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mps-a93bf693mpsa9302n6432+8ph5415pn54152sb718bss74s50n240je9093clow-power silicon pnphse194
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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2n2222 h 331 transistors
Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300
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bc107bc108bc109bc140+15bc141bc337bc337abc338bc368bc3752n2222 h 331 transistors2n2222a 3312n2222 -331 transistorspnp 2n3906 3312n2222 - 331jf4942n2222 2n5401 2n55512n2222 331 transistorspnp 2n4403 331
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2n2222 -331 transistors
Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111
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bc107bc107abc107bbc108+16bc108abc108bbc108cbc109bc109bbc109c2n2222 -331 transistors2n2222a 3312n2222 -3312n2222 a 3312n2222 331 transistorsja101p2n2222 3312n3904 331bc876bd131 bd132
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mps6514 replacement
Abstract: replacement BC107 bsx45 replacement BC109C replacement 2n2222a REPLACEMENT pxt2907 smd replacement of 2N3053 2n2905A replacement 2n2222a smd P2T2907
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483
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2n22972n24832n29042n2904a+162n30202n30532n34392n34402n40302n4032mps6514 replacementreplacement bc107bsx45 replacementbc109c replacement2n2222a replacementpxt2907 smdreplacement of 2n30532n2905a replacement2n2222a smdp2t2907
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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ph54
Abstract: PH5415 PH5416 HFE-30
Contextual Info: N AMER PHILIPS/DISCRETE bTE D b b S 3 c 3L 0 0 2 0 0 4 4 471 IAPX r n o ^ io PH5416 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors, p rim arily intended fo r use in te lep h o n y applications and encapsulated in a T O -9 2 envelope.
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2pc1815l2pc181510xx07z88986+10smd npn 2n2222bf471bsr62 equivalentequivalent transistor bc549ctransistor bf 175transistor bc547 ph in metal detectortunnel diodebsy95abf470bc200
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