BC33 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC

BC338

Contextual Info: DC COMPONENTS CO., LTD. BC338 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter

BC337A

Contextual Info: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338

BC307

Abstract: BC327 BC328 BC338 BC327 W 75
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

equivalent for BC327

Abstract: BC327 BC328 BC338 bc337 m 337a
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP BC337/A BC338 NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

bc337

Abstract: equivalent for BC337 BC337 equivalent bc337 transistor datasheet BC337 hfe bc337 transistor Transistor BC337 BC-337 HT640 ENCODER
Contextual Info: SEMICONDUCTOR BC337 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 25 BC337 2. Marking 4 Item Marking Description Device Name BC337 BC337 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.

BC338N

Abstract: BC328 BC338 2BC328
Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K

BC338

Abstract: bc33
Contextual Info: SEMICONDUCTOR BC338 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 25 BC338 2. Marking 4 Item Marking Description Device Name BC338 BC338 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.

BC328

Abstract: BC338 2BC338
Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G

BC337

Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J

bc327

Abstract: BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 BC337-25 BC337-40
Contextual Info: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC327-25 BC327-25 BC327-40 BC327-40 SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPES ARE BC337-25 AND BC337-40 RESPECTIVELY

BC337 NPN transistor datasheet

Abstract: bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 QW-R201-039 OF TRANSISTOR BC337
Contextual Info: UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

BC331

Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Contextual Info: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

Contextual Info: SWITCHING AND AMPLIFIER APPLICATIONS •Suitable for AF-Driver stages and low power output stages ·Complement to BC337 ABSOLUTE MAXIMUM RATINGS TO-92 TA=25 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES -50 V Collector-Emitter Voltage VCEO

BC338-16

Abstract: BC337 BC337 B 011
Contextual Info: MCC Features • • • BC337-16/25/40 BC338-16/25/40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338)

Contextual Info: MCC TM Micro Commercial Components Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1

Contextual Info: SynSEMi T O -92 Plastic Encapsulate Transistors SYMSEMI SEMICONDUCTOR BC3 37, -16, -25,-40 n p n transistor BC3 38, -16, -25,-40 FEATURES Power dissipation PCM : 0.625 W (Tamb=25 °C) Collector current Icm • 0.8 A Collector base voltage V cbo : BC337

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337，-16，-25,-40 TRANSISTOR（NPN ） BC338，-16，-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage

BC33B

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC337-25 BC337-40 BC337A Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min *c PD (W) (A) @Tc=25°c 50 45 5 0.625 0.5 50 60 45 60 5 5 0.625 0.5

bc337

Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

BC337L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G