NE944 Search Results

2SC3544

Abstract: NE94430 2SC3545 2SC4184 NE944 NE94432 NE94433 S21E
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

EZ 707

Abstract: 2SC3544 EZ 0710 EZ 728
Contextual Info: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

2SC3544

Abstract: IC sn 74 ls 2000
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry

18-12 049 transistor

Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
Contextual Info: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:

NE94433-T1B

Abstract: 2SC3545 2SC4184 NE944 NE94430 NE94430-T2 NE94432 NE94433 0840 057 MICROWAVE TRANSISTOR
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

2SC3544

Abstract: 2sc 792 lt 8232 CT 101 K 104 B 1206
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and mixer applications. It is suitable for automotive keyless entry

IS111

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry

NE32700

Abstract: NE46734 NE32702 NE32708 NE32740A NE32740B NE46700 NE68039 NE94430
Contextual Info: N E C / CALIFORNIA SbE D • b4E7414 DD0ES33 374 M N E C C Additional Small Signal Silicon Bipolar Products E LE C T R IC A L CH ARACTERISTICS PAR T N UM BER PACKAGE CODE VCEO V (mA) Pt (W) NE32700 NE32702 NE32708 NE32740A NE32740B CHIP 02 08 40A 40B 12

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

mcp60221

Abstract: IND-AIR-10-00189-500V-PTH UMSH-3112JNV-1G FAIRCHILD 1n5819 SMD diode Zener 5.1V UNITED RADIANT UMSH-3112JNV-1G yageo 1206 smd 1N5819 smd diode buzzer CC 1206 smd diode B3 SOT23
Contextual Info: AN1024 使用 PIC16F639 的 PKE 系统设计 作者： Youbok Lee, Ph.D. Microchip Technology Inc. 引言 免持式被动无钥门禁 （Passive Keyless Entry， PKE） 正迅速成为汽车远程无钥门禁应用的主流，并成为新型 汽车的普遍选择。使用该系统时，无需用手按发送器按

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

c3355

Abstract: c2570 transistor C2570 transistor c3355 C3355 schematic NE02132 C3544 C-2570 NE85632 marking 14
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 32 YEAR INDICATOR f 5.2 MAX MONTH INDICATOR 5.5 MAX MARKING INTERNAL CODE 14.0 MIN f 0.5 2.54 1.27 1.77 MAX B E C PART NUMBER NE02132

NE85630

Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

UMSH-3112JNV-1G

Abstract: smd zener diode mark J2 RFID Entry Door Lock Access Control System DS00710 IND-AIR-10-00189-500V-PTH AN1024 Transponder TPX buzzer CC 1206 umsh SMD SOT23 transistor MARK Y1
Contextual Info: AN1024 PKE System Design Using the PIC16F639 Author: Youbok Lee, Ph.D. Microchip Technology Inc. INTRODUCTION Hands-free Passive Keyless Entry PKE is quickly becoming mainstream in automotive remote keyless entry applications and is a common option on new

NE85633

Abstract: NE02133 NE68033 Marking R32 marking R33 NE68533 NE97833 NE68133 R24 marking NE94433
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 33 +0.2 2.8 -0.3 2.9 ± 0.2 0.95 2 1.9 3 +0.10 0.4 -0.05 ALL LEADS 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 MARKING 1.1 to 1.4 0.8 0 to 0.1

lcm-so1602

Abstract: LCM-SO1602DTR p3476 lcd 16x2 instruction set 433.92 receiver module, pcb layout for TPMS MCD-L160UH 67-1781-ND display lcd 2x16 MCP25511 DS00232
Contextual Info: Tire Pressure Monitoring System User’s Guide 2006 Microchip Technology Inc. DS51624B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

Contextual Info: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.