IS111 Search Results

TDA2579

Abstract: ic tda2595 TDA8432 TDA2595 860mhz rf amplifier circuit diagram monitor horizontal ic voltage video mixer circuit diagram video amplifier circuits for cctv 50MHz-300MHz cctv circuit diagram
Contextual Info: Signelics TDA8432 Computer-Controlled Deflection Processor for Video Displays Objective Specification Linear Products DESCRIPTION FEATURES The TDA8432 is an l2C bus-controlled deflection processor analog picture ge­ ometry processor which contains the control and drive functions of the deflec­

mrf901

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Ttansistor . . . designed primarily for use in high-gain, iow-noise, small-signal amplifiers. Also usable in applications requiring fast switching times. • High Current-Gain — Bandwidth Product —

Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA

76693-3170

Contextual Info: 12 13 10 DIM A .64- ±0.10 B AY ED G ELINE PART NUMBER VERSION BAY 1/BAY 2 76693-229476693-2274-* 76693-2278 76693-1200 76693-1170 76693-3170 122/172 122/172 146/132 200 170 170 2 2 2 1 1 1 BAY BAY BAY BAY BAY BAY TOTAL CIRCUITS 294294278 200 170 170 DIM A

Contextual Info: MICRON • 64K TECHNOLOGY, MC. MT58LC64K32/36B3 32/36 SYNCBURST SRAM X 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • Fast access times: 8.5,9, lOand 11ns Fast OE# access time: 5ns

CV9637

Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
Contextual Info: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

NEC Ga FET marking A

Abstract: NE25139T1U74 NE25139U NE25139T1U71
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz

BAO33

Abstract: ic 6462
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT |tP D 6 4 6 1 , 6 4 6 2 CM O S LSI CHIP FOR C A M C O RDER O N-SCREEN CHARACTER DISPLAY 12 ROW S x 24 CO LU M NS The ¿¡PD6461, 6462 are CMOS LSI chips designed to provide on-screen character display for cam corders. When

LS2212

Abstract: MC13155 S121 SIEMENS saw filter X6950M S2212-IA12 motorola 6522 5604B X6950M O22P X6958M
Contextual Info: Order this document by MC13155~ MOTOROLA @ Wideband MC13155 FM [F The MC131 55 is a complete wideband FM detector desianed for satellite TV and other wideband data and analog FM applications. ;his device may be cascaded for higher IF gain and eMended Receive Signal Strength

Contextual Info: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES_ Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB V ds

2SC1600

Abstract: ne57500 NE57510
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series

IN647

Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
Contextual Info: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200

Contextual Info: S WIRE LE SS E M I C N D U C T 0 R , I N C C O M M U N I C A T I O N S 3-V Low-Current Downconverter 1C The TQ9223B 3V RFIC Downconverter is an RF receiver 1C front end designed for the high dynamic range cellular com m unications standards. The TQ9223B provides a

Contextual Info: 80225 Technology Incorporated 10/100 MbpsTX/10BT Ethernet Physical Layer Device PHY PRELIMINARY DATA SHEET Features • Single Chip 100Base-TX/10Base-T Physical Layer Solution ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V Version of SEEQ 80221

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

9202-B68FS3C10

Abstract: A223 9202-B68FS1C10
Contextual Info: 9202 Series □UPI in PCMCIA Socket Material: Housing:High Temperature Plastic UL94V-0. Contacts: Phosphor Bronze. Electrical Characteristics: Current Rating: 0.5 A. Dielectric Withstanding Voltage: AC 500V. Insulator Resistance: 1000MQ min. Contact Resistance: 40m£2 max.

NBC 3111

Abstract: EZ647 EZ64724 NEZ6472-4DL NEZ6472-8DL
Contextual Info: NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTPUT POWER AND EFFICIENCY vs. INPUT POWER • HIGH P out 18W 42.5 dBm Typ PidB for NEZ6472-15D/15DL 9W (39.5 dBm) Typ PidB for NEZ6472-8D/8DL

ami c21

Abstract: amd catalog
Contextual Info: PRELIMINARY DATA SHEET ACS8510 SETS SONET/SDH Synchronisation Advanced Communications Revision 2.02 September 2000 Synchronous Equipment Timing Source for SONET or SDH Network Elements FEATURES DESCRIPTION The ACS8510 is a highly integrated, single-chip solution • Suitable for Stratum 3, 3E and 4 SONET or SDH

IN4149

Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.

BEST BASS TREBLE CIRCUIT

Abstract: 19KHZ 38KHZ 57KHZ S020 TDA7460N TDA7460ND
Contextual Info: . SGS-TtiOMSON k7 # . TD A 7460N RiflD K EILi©ìrMIRDD©l CAR RADIO SIGNAL PROCESSOR • DEVICE INCLUDES AUDIO PROCESSOR, STEREO DECODER, NOISEBLANKER AND MULTIPATH DETECTOR ■ HIGH PERFORMANCE SIGNAL PROCES­ SOR . NO EXTERNAL COMPONENTS REQUIRED . FULLY PROGRAMMABLE VIA l2C BUS

Contextual Info: TMC2310 FFT Processor 16/19-Bit, 20MHz The TMC2310 is an advanced integrated circuit which is capable of executing complex Fast Fourier Transforms FFT , forward or inverse, of up to 1024 points, with or without data windowing. The device operates with either

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

6bb1

Contextual Info: SETS-LC ACS8515 SETS Protection Switch for Line Cards ADVANCED COMMUNICATIONS PRELIMINARY Features Description The ACS8515 is a highly integrated, single-chip solution for "hit-less" protection switching of SEC clocks from Master and Slave SETS clock cards in a

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7