NE64535
Abstract: S21E Low Noise R.F ne645
Contextual Info: NE64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. PACKAGE STYLE .085 4L SQ FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • S21E2 = 11 dB Typical @ 2 GHz
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ne64535s21e2asi10752s21e+2low noise r.fne645
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Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 FEATURES DESCRIPTION • HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The NE645 series employs a new NEC proprietary fabrication
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ne64500ne64535ne64587ne645+4mil-s-19500mil-std-750gh000is12i
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NE64535
Abstract: NE64500 nec08 2SC2585 NE645 2SC2273 0/2SC2585 mig mag 200 NE64508 s2212
Contextual Info: S bE N E C/ CALIFORNIA NEC D • b M 2 7 L tm 0 D 0 2 M 2 2 bDfl H N E C C NE64500 NE64508 NE64535 NE64587 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURED DESCRIPTION AND APPLICATIONS • HIGH fr fr = 8.5 GHz The NE645 series of NPN silicon transistors is designed for
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ogo2m22t-31-hne64500ne64508+9ne64535ne64587ne645nec082sc25852sc22730/2sc2585mig mag 200s2212
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NE64500
Abstract: 2SC2585 ne645 E645
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 DESCRIPTION FEATURES HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The N E645 series employs a new NEC proprietary fabrication
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ne64500ne64535ne64587ne645+6il-s-19500il-std-750is12is12s212sc2585e645
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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ne46134ne85634ne46734ne85619+11ne6811973412ne64535chip transistor 348fvh 38p08cne68039ne889ne02135ne64500ne24318
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NE88933
Abstract: ne85639 NFC46 NE57835 NE645 NE21935 NE64535 NE68033 NE68035 NE68039
Contextual Info: N E C / SbE CALIFORNIA D • t.427414 ODGEflMB Tbb HNECC RF and DC Specifications Low Noise Devices a lllfj |3^ 1* #1 f II itti ft* iltasfc-S SSmiJe iSÉ-asfcl | | i | | | I in a»iiSr# *W =BP*>8 AiS SiiSf*K f a ll * t i l l MAG ' CL Ic f SÈI««nW_e «gÿwfflHfea®»la V (mA) (GH/)
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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transistor cross referencempt3n40westinghouse scr handbooklt 8224 zener diode+6sje389n9602nnpn transistor rca 467tfk 7 segment displaysput 2n6027delco 466
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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