ND2406 Search Results

nd2410l

Contextual Info: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

ND2406B

Abstract: nd2406
Contextual Info: SILICÔNIX INC 1ÖE D 025 4735 0 0 1 4 0 5 5 2 I ND2406 SERIES 'S ifi_ fX'SH >c a n »c JLB in il c o rp o ra te d T -2 n -7 ,5 N-Channel Depletlon-M ode MOS Transistors BOTTOM VIEW TO-92 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER V BR DSV fDS(ON)

ND2410L

Contextual Info: Ä1«ssslä VDDV SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDV1CHP* VDDV2CHP* ND2406L ND2410L ‘ Meets or exceeds specification for all part numbers listed below G ate Pad 0-005 0.127 0 007 (0.178) M* «4 p*« tl» c i U :R *«fl:»iag f u t a _f« * « a « B * S

2410l

Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features

2410l

Abstract: AN901 BSS129 ND2406 ND2406L ND2410L
Contextual Info: ND2406L/2410L, BSS129 Siliconix NĆChannel DepletionĆMode MOS Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 -1.5 to -4.5 0.23 10 -0.5 to -2.5 0.18 20 -0.7 (min) 0.15 240 ND2410L BSS129 230 For applications information see AN901.

BSS129

Abstract: ND2406 ND2406L ND2410 ND2410L
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features

2406l

Abstract: BSS129 N-Channel Depletion-Mode MOSFET depletion-mode MOSFET
Contextual Info: T em ic ND2406L/2410L, BSS129 S e m i c o n d u c t o r s N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V ) *Ds<on) N D 2406L Max ( f i ) v GS<0ff) -1 .5 t o -4 .5 0.23 10 -0 .5 t o -2 .5 0.18 20 -0 .7 (m in) 0.15 240

2410l

Abstract: BSS129 P3780 ND2410L
Contextual Info: Tem ic ND2406L/2410L, BSS129 Siliconix N-Channel Depletion-Mode MOS Transistors Product Summary Part Number V BR DSV M in (V) ND2406L rDS(on) M ax (£2) VGg(oH) (V) I d (A) 6 -1 .5 to -4 .5 0.23 10 -0 .5 to -2 .5 0.18 20 -0 .7 (min) 0.15 240 ND2410L BSS129

N-Channel Depletion-Mode MOSFET

Abstract: VDDV24
Contextual Info: VDDV24 J7ESS& N-Channel Depletion-Mode MOSFET_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2406L, ND2410L Single Chip • Available as VDDV1CHP, VDDV2CHP TYPICAL CHARACTERISTICS On-Resistance & Drain Current vs. Gate-Source Cutoff Voltage

2410l

Abstract: BSS129 ND2406 ND2406L ND2410 ND2410L N-Channel Depletion-Mode MOSFET
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features

Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features

N-Channel Depletion-Mode MOSFET

Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
Contextual Info: AN901 Siliconix DepletionĆMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementĆmode. The nĆchannel enhancementĆmode MOSFET Figure 1c , requires a positiveĆpolarity gate voltage

N-Channel Depletion-Mode MOSFET

Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion
Contextual Info: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FET package TO-71

Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Contextual Info: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

P-Channel Depletion Mosfets

Abstract: mosfet low idss mosfet depletion P-Channel Depletion-Mode depletion mode fet Depletion MOSFET N-Channel Depletion-Mode MOSFET depletion mode mosfet n-channel mosfet triggering N CHANNEL DEPLETION MOSFET
Contextual Info: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate potential

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete