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    ND2012 Search Results

    ND2012 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ND2012L
    Temic Semiconductors N-Channel Depletion-Mode MOSFET Transistors Original PDF 77.61KB 4
    ND2012L
    Vishay Intertechnology N-Channel Depletion-Mode MOSFET Transistor Original PDF 65.97KB 4
    ND2012L
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 87.66KB 1
    ND2012L
    Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF 182.74KB 1
    ND2012L-TR1
    Vishay Transistor Mosfet N-CH 200V 0.16A 3TO-226AA T/R Original PDF 77.61KB 4
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    ND2012 Price and Stock

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    SILICONIX(Vishay) ND2012L-TR1

    ND2012L-TR1
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    Verical ND2012L-TR1 2,765 464
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    SILICONIX(Vishay) ND2012L

    ND2012L
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    Verical ND2012L 2,543 574
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    TAIYO YUDEN LLCND2012HKTR47MD

    Inductor Power Molded Multi-Layer 470nH 20% 1MHz Metal Composite 4.8A 0805 Emboss T/R - Tape and Reel (Alt: LLCND2012HKTR47MD)
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    Avnet Americas LLCND2012HKTR47MD Tape & Reel 6 Weeks 4,000
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    TAIYO YUDEN LSCND2012HKTR24MF

    INDUCTOR, MCOIL MULTILAYER, 0.24UH#20%, T&R - Tape and Reel (Alt: LSCND2012HKTR24MF)
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    TTI LSCND2012HKTR24MF Reel 4,000
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    TAIYO YUDEN LSCND2012HKTR47MD

    Inductor Power Molded Multi-Layer 470nH 20% 1MHz Metal Composite 4A 0805 Emboss T/R - Tape and Reel (Alt: LSCND2012HKTR47MD)
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    ND2012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ND2020L

    Contextual Info: A flg S ä VDDQ SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDQ1CHP* VDDQ2CHP* ND2012L ND2020L ‘ Meets or exceeds specification for all part numbers listed below 0.038 ro.965; Source Pad For additional design information please consult the typical performance curves VDDQ20.


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    nd2020lnd2012lvddq20 PDF

    Contextual Info: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46.


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    nd2012l/2020lnd2012lnd2020lan901+1p-37807--rev PDF

    AN901

    Abstract: ND2012L ND2020 ND2020L 37807
    Contextual Info: ND2012L/2020L Siliconix NĆChannel DepletionĆMode MOS Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 -1.5 to -4 0.16 20 -0.5 to -2.5 0.132 200 ND2020L For applications information see AN901. Features


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    nd2012l/2020lnd2012lnd2020lan901+4o226aap-37807--revnd202037807 PDF

    ND2020

    Abstract: ND2012L ND2020L TA 7061
    Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D


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    nd2012l/2020lnd2012lnd2020lo-226aa+4s-52426--rev14-apr-97nd2020ta 7061 PDF

    Contextual Info: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage


    OCR Scan
    vddq20o-226aand2012lnd2020l+2nd2020nd2012 PDF

    C-1555

    Abstract: N1230 TO206AC
    Contextual Info: SILICONIX INC 18E [I 5554735 0014051 5 ffT 'S ilic o n ix JtmM in c o rp o ra te d ND2012 SERIES 'T - lS l- 'Z S N-Channel Depletion-M ode M OS Transistors BOTTOM VIEW TO-92 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER V BR DSV fDS(ON) (V) (« > Id


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    nd2012nd2012lnd2012eo-206ac+5vddq201250xlc-1555n1230to206ac PDF

    N-Channel Depletion-Mode MOSFET

    Abstract: TA 7061 52426 ND2020L
    Contextual Info: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage


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    nd2012l/2020lnd2012lnd2020lo-226aa+5s-52426--rev14-apr-97n-channel depletion-mode mosfetta 706152426 PDF

    2020L

    Abstract: Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET
    Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D


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    nd2012l/2020lnd2012lnd2020lo-226aa+6s-52426--rev14-apr-972020lnd202nd2020n-channel depletion-mode mosfet PDF

    nd2020

    Abstract: ND2012L ND2020L S-52426 2020L
    Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


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    nd2012l/2020lnd2012lnd2020lo-226aa+418-jul-08nd2020s-524262020l PDF

    Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


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    nd2012l/2020lnd2012lnd2020lo-226aa+108-apr-05 PDF

    ND2020L

    Contextual Info: OfSSS& ND2012L, ND2020L N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BRJDSS rDS(ON (O) •d (A) ND2012L 200 12 0.16 ND2020L 200 20 0.132 3 DRAIN Performance Curves: VDDQ20 3 .I— i— , 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan
    nd2012lnd2020lvddq202020l+1150ource PDF

    pt100 interface current source multiplexer

    Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24+9pt100 interface current source multiplexerpt100 sensor with adc 4-20mapt100 sensor interface with microcontrollerdn2540ne43xtr108eavoltage to current converter dual 4-20ma schemextr 110rtd signal conditioning theory PDF

    Contextual Info: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24 PDF

    N-Channel Depletion-Mode MOSFET

    Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
    Contextual Info: AN901 Siliconix DepletionĆMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementĆmode. The nĆchannel enhancementĆmode MOSFET Figure 1c , requires a positiveĆpolarity gate voltage


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    an901nd2012nd24062n692+9n-channel depletion-mode mosfetnormal scr operationdepletion-modedepletion mode current limitermosfet vs scrmosfet modern applicationsvoltage regulator mosfet 1,2n channel depletion mosfetdepletion mode mosfet PDF

    Voltage to Current Converter dual 4-20mA scheme

    Abstract: pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme
    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24+9voltage to current converter dual 4-20ma schemept100 rtd spiuc 493pt100 multiplexerdn2540ne43xtr108eartd pt100 temp vs resistance relationship4-20ma scheme PDF

    pt100 rtd spi

    Abstract: DN2540 NE43 XTR108 XTR108EA RTD SENSING CIRCUIT 4-20mA pt100 adc microchip depletion-mode MOSFET namur driver 350mV
    Contextual Info: XTR108 XTR 108 SBOS187A – OCTOBER 2001 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V ● ELIMINATES POTENTIOMETERS AND


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    xtr108sbos187a4-20massop-24+9pt100 rtd spidn2540ne43xtr108eartd sensing circuit 4-20mapt100 adc microchipdepletion-mode mosfetnamur driver350mv PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode PDF

    Voltage to Current Converter dual 4-20mA scheme

    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24+1voltage to current converter dual 4-20ma scheme PDF

    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24 PDF

    pt100 multiplexer

    Abstract: BSP149 equivalent namur ne43 RTD SENSING CIRCUIT 4-20mA pt100 rtd spi
    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24+5pt100 multiplexerbsp149 equivalentnamur ne43rtd sensing circuit 4-20mapt100 rtd spi PDF

    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24 PDF

    Resistance characteristic Pt100

    Abstract: RTD PT100 temp Vs resistance relationship 100RTD
    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24+3resistance characteristic pt100rtd pt100 temp vs resistance relationship100rtd PDF

    voltage 0-5v to 4-20mA loop converter

    Abstract: Voltage to Current Converter dual 4-20mA scheme pt100 multiplexer pt100 rtd spi XTR108 XTR108EA DN2540 NE43 xtr 110 namur ne43
    Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    xtr108sbos187c4-20massop-24+9voltage 0-5v to 4-20ma loop convertervoltage to current converter dual 4-20ma schemept100 multiplexerpt100 rtd spixtr108eadn2540ne43xtr 110namur ne43 PDF

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


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    2n6660irff110vn2210n2vn0605t+14tn2106k1-gzvn0540avn0550n3-g2n6661mosfet cross referencebs170 replacementvn10km replacementcross reference 2n6661bst72a replacementbsn10 "cross referencebst72a crossequivalent of bs250zvnl110a cross referencevn10km cross PDF