ND2012 Search Results
ND2012 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ND2012L | Temic Semiconductors | N-Channel Depletion-Mode MOSFET Transistors | Original | 77.61KB | 4 | ||
| ND2012L | Vishay Intertechnology | N-Channel Depletion-Mode MOSFET Transistor | Original | 65.97KB | 4 | ||
| ND2012L | Unknown | Shortform Datasheet & Cross References Data | Short Form | 87.66KB | 1 | ||
| ND2012L | Vishay Siliconix | Shortform Siliconix Datasheet | Short Form | 182.74KB | 1 | ||
| ND2012L-TR1 | Vishay | Transistor Mosfet N-CH 200V 0.16A 3TO-226AA T/R | Original | 77.61KB | 4 |
ND2012 Price and Stock
SILICONIX(Vishay) ND2012L-TR1ND2012L-TR1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ND2012L-TR1 | 2,765 | 464 |
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SILICONIX(Vishay) ND2012LND2012L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ND2012L | 2,543 | 574 |
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TAIYO YUDEN LLCND2012HKTR47MDInductor Power Molded Multi-Layer 470nH 20% 1MHz Metal Composite 4.8A 0805 Emboss T/R - Tape and Reel (Alt: LLCND2012HKTR47MD) |
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LLCND2012HKTR47MD | Tape & Reel | 6 Weeks | 4,000 |
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TAIYO YUDEN LSCND2012HKTR24MFINDUCTOR, MCOIL MULTILAYER, 0.24UH#20%, T&R - Tape and Reel (Alt: LSCND2012HKTR24MF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LSCND2012HKTR24MF | Tape & Reel | 6 Weeks | 4,000 |
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LSCND2012HKTR24MF | Reel | 4,000 |
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TAIYO YUDEN LSCND2012HKTR47MDInductor Power Molded Multi-Layer 470nH 20% 1MHz Metal Composite 4A 0805 Emboss T/R - Tape and Reel (Alt: LSCND2012HKTR47MD) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LSCND2012HKTR47MD | Tape & Reel | 8 Weeks | 4,000 |
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LSCND2012HKTR47MD | Reel | 4,000 |
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ND2012 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ND2020LContextual Info: A flg S ä VDDQ SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDQ1CHP* VDDQ2CHP* ND2012L ND2020L ‘ Meets or exceeds specification for all part numbers listed below 0.038 ro.965; Source Pad For additional design information please consult the typical performance curves VDDQ20. |
OCR Scan |
nd2020lnd2012lvddq20 | |
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Contextual Info: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46. |
OCR Scan |
nd2012l/2020lnd2012lnd2020lan901+1 | |
AN901
Abstract: ND2012L ND2020 ND2020L 37807
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nd2012l/2020lnd2012lnd2020lan901+4 | |
ND2020
Abstract: ND2012L ND2020L TA 7061
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nd2012l/2020lnd2012lnd2020lo-226aa+4 | |
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Contextual Info: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage |
OCR Scan |
vddq20o-226aand2012lnd2020l+2 | |
C-1555
Abstract: N1230 TO206AC
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nd2012nd2012lnd2012eo-206ac+5 | |
N-Channel Depletion-Mode MOSFET
Abstract: TA 7061 52426 ND2020L
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nd2012l/2020lnd2012lnd2020lo-226aa+5 | |
2020L
Abstract: Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET
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nd2012l/2020lnd2012lnd2020lo-226aa+6 | |
nd2020
Abstract: ND2012L ND2020L S-52426 2020L
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nd2012l/2020lnd2012lnd2020lo-226aa+4 | |
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Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V |
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nd2012l/2020lnd2012lnd2020lo-226aa+1 | |
ND2020LContextual Info: OfSSS& ND2012L, ND2020L N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BRJDSS rDS(ON (O) •d (A) ND2012L 200 12 0.16 ND2020L 200 20 0.132 3 DRAIN Performance Curves: VDDQ20 3 .I— i— , 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) |
OCR Scan |
nd2012lnd2020lvddq202020l+1 | |
pt100 interface current source multiplexer
Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
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xtr108sbos187c4-20massop-24+9 | |
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Contextual Info: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V |
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xtr108sbos187c4-20massop-24 | |
N-Channel Depletion-Mode MOSFET
Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
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an901nd2012nd24062n692+9 | |
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Voltage to Current Converter dual 4-20mA scheme
Abstract: pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme
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xtr108sbos187c4-20massop-24+9 | |
pt100 rtd spi
Abstract: DN2540 NE43 XTR108 XTR108EA RTD SENSING CIRCUIT 4-20mA pt100 adc microchip depletion-mode MOSFET namur driver 350mV
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xtr108sbos187a4-20massop-24+9 | |
mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
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t0-92options4206azvn4206czvn4206e+15 | |
Voltage to Current Converter dual 4-20mA schemeContextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V |
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xtr108sbos187c4-20massop-24+1 | |
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Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V |
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xtr108sbos187c4-20massop-24 | |
pt100 multiplexer
Abstract: BSP149 equivalent namur ne43 RTD SENSING CIRCUIT 4-20mA pt100 rtd spi
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xtr108sbos187c4-20massop-24+5 | |
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Contextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V |
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xtr108sbos187c4-20massop-24 | |
Resistance characteristic Pt100
Abstract: RTD PT100 temp Vs resistance relationship 100RTD
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xtr108sbos187c4-20massop-24+3 | |
voltage 0-5v to 4-20mA loop converter
Abstract: Voltage to Current Converter dual 4-20mA scheme pt100 multiplexer pt100 rtd spi XTR108 XTR108EA DN2540 NE43 xtr 110 namur ne43
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xtr108sbos187c4-20massop-24+9 | |
mosfet cross reference
Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
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2n6660irff110vn2210n2vn0605t+14 | |