ND2020 Search Results
ND2020 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ND2020 | Temic Semiconductors | N-Channel Depletion-Mode MOSFET Transistors | Original | 77.62KB | 4 | ||
| ND2020L | Temic Semiconductors | N-Channel Depletion-Mode MOSFET Transistors | Original | 77.62KB | 4 | ||
| ND2020L | Vishay Siliconix | N-Channel Depletion-Mode MOSFET Transistors | Original | 65.97KB | 4 | ||
| ND2020L | Unknown | Shortform Datasheet & Cross References Data | Short Form | 87.66KB | 1 | ||
| ND2020L | Vishay Siliconix | Shortform Siliconix Datasheet | Short Form | 182.74KB | 1 | ||
| ND2020L-TR1 | Vishay | Transistor Mosfet N-CH 200V 0.132A 3TO-226AA T/R | Original | 77.61KB | 4 |
ND2020 Price and Stock
TAIYO YUDEN LMXND2020MKT3R3M0GInductor Power Shielded Wirewound 3.3uH 20% 100kHz Ferrite 1A 0808 Emboss T/R - Tape and Reel (Alt: LMXND2020MKT3R3M0G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LMXND2020MKT3R3M0G | Tape & Reel | 7 Weeks | 2,500 |
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TAIYO YUDEN LCDND2020MKTR68MMInductor Power Shielded Wirewound 680nH 20% 1MHz Metal Composite 3.5A 0808 Emboss T/R - Tape and Reel (Alt: LCDND2020MKTR68MM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LCDND2020MKTR68MM | Tape & Reel | 6 Weeks | 2,500 |
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LCDND2020MKTR68MM | 17 Weeks | 2,500 |
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TAIYO YUDEN LBDND2020KKT2R2MMInductor Power Shielded Wirewound 2.2uH 20% 1MHz Metal Composite 1.65A 0808 Emboss T/R - Tape and Reel (Alt: LBDND2020KKT2R2MM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LBDND2020KKT2R2MM | Tape & Reel | 6 Weeks | 2,500 |
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LBDND2020KKT2R2MM | 17 Weeks | 2,500 |
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TAIYO YUDEN LSDND2020JET2R2MMInductor Power Shielded Wirewound 2.2uH 20% 1MHz Metal Composite 1.05A 0808 Emboss T/R - Tape and Reel (Alt: LSDND2020JET2R2MM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LSDND2020JET2R2MM | Tape & Reel | 6 Weeks | 2,500 |
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LSDND2020JET2R2MM | 17 Weeks | 2,500 |
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TAIYO YUDEN LSDND2020JET6R8MMInductor Power Shielded Wirewound 6.8uH 20% 1MHz Metal Composite 750mA 0808 Emboss T/R - Tape and Reel (Alt: LSDND2020JET6R8MM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LSDND2020JET6R8MM | Tape & Reel | 8 Weeks | 2,500 |
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ND2020 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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d2020eContextual Info: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A) |
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5s473snd2020nd2020lnd2020e+3 | |
ND2020LContextual Info: A flg S ä VDDQ SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDQ1CHP* VDDQ2CHP* ND2012L ND2020L ‘ Meets or exceeds specification for all part numbers listed below 0.038 ro.965; Source Pad For additional design information please consult the typical performance curves VDDQ20. |
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nd2020lnd2012lvddq20 | |
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Contextual Info: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46. |
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nd2012l/2020lnd2012lnd2020lan901+1 | |
AN901
Abstract: ND2012L ND2020 ND2020L 37807
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nd2012l/2020lnd2012lnd2020lan901+4 | |
ND2020
Abstract: ND2012L ND2020L TA 7061
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nd2012l/2020lnd2012lnd2020lo-226aa+4 | |
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Contextual Info: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage |
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vddq20o-226aand2012lnd2020l+2 | |
N-Channel Depletion-Mode MOSFET
Abstract: TA 7061 52426 ND2020L
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nd2012l/2020lnd2012lnd2020lo-226aa+5 | |
2020L
Abstract: Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET
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nd2012l/2020lnd2012lnd2020lo-226aa+6 | |
nd2020
Abstract: ND2012L ND2020L S-52426 2020L
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nd2012l/2020lnd2012lnd2020lo-226aa+4 | |
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Contextual Info: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V |
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nd2012l/2020lnd2012lnd2020lo-226aa+1 | |
ND2020LContextual Info: OfSSS& ND2012L, ND2020L N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BRJDSS rDS(ON (O) •d (A) ND2012L 200 12 0.16 ND2020L 200 20 0.132 3 DRAIN Performance Curves: VDDQ20 3 .I— i— , 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) |
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nd2012lnd2020lvddq202020l+1 | |
pt100 interface current source multiplexer
Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
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xtr108sbos187c4-20massop-24+9 | |
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Contextual Info: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V |
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xtr108sbos187c4-20massop-24 | |
N-Channel Depletion-Mode MOSFET
Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
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an901nd2012nd24062n692+9 | |
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pt100 sensor interface with microcontroller
Abstract: PT100 RTD signal conditioning noise problem pt100 sensor with adc 4-20mA pt100 rtd spi pt100 interface WITH ADC maxim pt100 interface RTD SENSING CIRCUIT 4-20mA maxim 4-20ma receiver il300 national instruments piezoelectric pressure sensor
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4-20mamax535max5351max5352+15 | |
Voltage to Current Converter dual 4-20mA scheme
Abstract: pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme
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xtr108sbos187c4-20massop-24+9 | |
MIL-I-8835A
Abstract: camtex trays ND07071 camtex trays QFP nd r304 E20-02080-00 ITW Camtex ceramic QFP Package 100 lead exposed QFP 144 CAMTEX
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mil-i-8835acamtex traysnd07071camtex trays qfp+6 | |
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Contextual Info: 19-3977; Rev 0; 1/06 KIT ATION EVALU E L B A IL AVA Microcontroller-Interface, 4.5-/3.5-Digit Panel Meters with 4–20mA Output Features The MAX1366/MAX1368 low-power, 4.5- and 3.5-digit, panel meters feature an integrated sigma-delta analogto-digital converter ADC , LED display drivers, voltage |
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max1366/max1368200mvmax1368max1366+2 | |
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
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1n32451n3611gp1n3612gp1n3613gp+16 | |
pt100 rtd spi
Abstract: DN2540 NE43 XTR108 XTR108EA RTD SENSING CIRCUIT 4-20mA pt100 adc microchip depletion-mode MOSFET namur driver 350mV
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xtr108sbos187a4-20massop-24+9 | |
mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
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t0-92options4206azvn4206czvn4206e+15 | |
Voltage to Current Converter dual 4-20mA schemeContextual Info: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V |
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xtr108sbos187c4-20massop-24+1 | |
strapack s-669
Abstract: strapack Sivaron S 669 MIL-I-8835A kbr 208 MIL-D-3464 strapack d-52 MIL-B-81705C EIA-625 MIL-D-3464 type 1
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-an-071-04/jstrapack s-669strapacksivaron s 669+7 | |
DN25D
Abstract: 20c15 fet dn25d interfacing AD7715 ground detection ammeter circuit Symbios Logic 20c15 0-5 v to 4-20 ma converter
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16-bit16-pinad42116-lead+8 | |