mur 4060
Contextual Info: DIGITRON SEMICONDUCTORS MUR870E-MUR8100E 8A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating MUR Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR 870 880 890 8100 700
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mur870e-mur8100emil-prf-19500mur 4060 |
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UR880
Abstract: RURP880 890E 870e 880e
Contextual Info: MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 HARRIS S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Diodes A p ril 1 9 9 5 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 75ns JE D E C TO -220A C ANODE
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mur870emur880emur890emur8100e+9rurp870rurp880rurp890rurp8100-220aur880890e870e880e
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MUR850
Abstract: MUR830 MUR880 MUR890 MUR850 diode MUR805 MUR810 MUR815 MUR820 MUR860
Contextual Info: M O T O R O L A SC -CDIODES/OPTOJ IS E D I b 3 b ? a s s □ Q 7 ci7Li7 3 | _ T-Û3-17 MUR805 MUR810 MUR815 MUR820 MUR830 MUR840 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE POWER RECTIFIERS MUR850 MUR860 MUR870 MUR880 MUR890 MUR8100 ULTRAFAST
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t-03-17mur805mur850mur810+8mur860mur815mur870mur820mur880mur830mur890mur850 diode
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RURP880
Abstract: MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870
Contextual Info: S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE o CATHODE • +175 C Rated Junction Temperature
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mur870emur880emur890emur8100e+10rurp870rurp880rurp890rurp8100o-220acmur890mur870rur880mur880rur870
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RURP880
Contextual Info: hßA R m S ' — MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE • +175°C Rated Junction Temperature
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mur870emur880emur890emur8100e+5rurp870rurp880rurp890rurp8100o-220ac
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Diode MUR880E
Abstract: RUR880 MUR890E RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A
Contextual Info: MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 0042377 2Tb « H A S RUR8909 RUR8100 HARRIS SbE D H302271 8A Ultrafast Diode With Soft Recovery Characteristic M a y 1991 HARRIS SEMICON] SECTOR ~ Q 3 ~ 1 7 Package r e m u ra n T O -2 2 0 A C TOP VIEW • Ultrafast with Soft Recovery Characteristic
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mur870emur880emur890emur8100e+8rur870rur88043q22710g42377rur890rur8100diode mur880elf 1a
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transistor 700v
Abstract: RURP880 MUR890E transistor 800V 1A RUR880
Contextual Info: m M A D D IQ 3 j MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 8A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features JEDEC TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic (tRR < 75ns • +175°C Rated Junction Temperature
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mur870emur880emur890emur8100e+8rurp870rurp880rurp890rurp8100o-220actransistor 700vtransistor 800v 1arur880
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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BYW19-1000
Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820
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fo-0121-800-4-harrisbyw19-1000byx49-600+8byx49-1200byv72e-200rs8mtbyx49by229-1000unitrode crossbyt29-300byv72-200
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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RURU10060
Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.
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rurp8120rurp15120rurp30120rurg30120+16rurg50120rurg75120ruru50120ruru75120ruru100120ruru150120ruru10060mur1560mur850mur850 diodemur880emur1510mur1515mur810mur815rurg3010
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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atv5030atv5090batv6031atv6060h+15atv7050bal99lt1bas16lt1bas21lt1bav70lt1bav74lt1mled96brx49 scrmrf549mrf660mrf548mmbr2857lt1cr2428mpf3822mrf548 motorola
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MTP12N10 pin configuration
Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 * Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.
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mj16110/dmj16110mjw16110mtp12n10 pin configuration+7irfd9123irfd113 equivalentmtp25n06pk98mtp12n10mur47mj16010 datasheet
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MJ802 EQUIVALENT
Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110* Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •
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mj16110mjw16110tip73btip74+16tip74atip74btip75tip75atip75btip75cmj802 equivalent2n3055 equivalent transistor numbermj4502 equivalentbd131 equivalentbd139 equivalentst t8 3580mj15025* equivalentmj3055 equivalentbdx37 equivalentmje340 equivalent
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MUR1520 equivalent
Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Contextual Info: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100
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5a/80amur1550rurp3050rurg3050+15rurg5050rurg8050ruru5050ruru8050ruru10050ruru15050mur1520 equivalentmur850byw51150mur880mur1510mur810rurd410rurd610rurd610s
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MUR850
Abstract: motorola mur850 MUR830 MUR805 MUR810 MUR815 MUR820 MUR840 MUR860 T0810
Contextual Info: MOTOROLA SC DIODES/OPTO b4E D • fc.3 b 7 2 S 5 Q 0 fib4 7 7 MUR805 MUR810 MUR815 MUR820 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 003 ■ MUR830 MUR840 MUR850 MUR860 MUR820, MUR840 and MUR860 are Motorola Preferred Devices SWITCHMODE POWER RECTIFIERS ULTRAFAST
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3b72s5q0fib477175qco-220+10mur805mur830mur810mur840mur815mur850motorola mur850mur820mur860t0810
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RURP1S60
Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
Contextual Info: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010
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o-220aco-247o-21bmur810+12rurp810mur815rurp815mur820rurpb20mur840rurp1s60rurp880rurp3080ultrafast 600vrurg8040mur1550
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BYT01-200
Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
Contextual Info: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600
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1n49421n4942gp1n49441n4944gp+161n49461n4946gp1n49471n4947gp1n49481n4948gpbyt01-200uf54002rs8ktbyt30p800mr918uf54004plr818byw99p-150byw100-1001n4946 cross reference
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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murb1620ctvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605stpr16mur480e340l-02pk mur 460bv 202 01581n541ak sot23stps2045ss33 smba14f diode
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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