MUR470 Search Results

MUR470

Abstract: MUR4100 MUR480 MUR490 mur47
Contextual Info: BL GALAXY ELECTRICAL MUR470 - MUR4100 VOLTAGE RANGE: 700-1000 V CURRENT: 4.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand

MUR405

Abstract: MUR410 MUR415 MUR420 MUR430 MUR440 MUR450 MUR460 MUR470 MUR480
Contextual Info: MOTOROLA s c -c d i o d e s / o p t o j 12 E D I MUR405 MUR410 MUR415 MUR420 MUR430 MUR440 MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA •— b3ti7555 OOT'iTt.O 0 | MUR450 MUR460 MUR470 MUR480 MUR490 MUR4100 w -• ULTRAFAST RECTIFIERS 4.0 A M P E R E S

MUR470E

Abstract: MUR4100E MUR480E MUR490E MUR8100E diode MUR 480
Contextual Info: MOTOROLA b4E h3b72SS SEMICONDUCTOR • ■ TECHNICAL DATA GGflb471 b'ìS ■ MOTOROLA SC DIODES/OPTO MUR470E M UR480E MUR490E M UR4100E Switchm ode Power Rectifiers Ultrafast " E " Series w/High Reverse Energy Capability MUR4100E is a M otorola Preferred Device

Contextual Info: DIGITRON SEMICONDUCTORS MUR470E-MUR4100E 4A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Symbol MUR 470E 480E 490E 4100E 700 800 900 1000 Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current square wave

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

MTP12N10 pin configuration

Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

C4171

Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
Contextual Info: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s

MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

MUR830

Abstract: MOTOROLA MUR115 MUR890 BYW29 MUR1530 MUR430 MUR880 byw80 schottky BYW29-50 MUR490
Contextual Info: EXPANDING the SW ITCHM O DE Rectifier fam ily are these ultrafast devices with reverse recovery tim es of 25 to 100 nanoseconds. They com plem ent the broad Schottky offering for use in the higher voltage outputs and internal circuitry of switching power supplies as operating frequencies increase

bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

MBR140P

Abstract: MBR120P MBR130P Motorola MDA962-1 Motorola Schottky 1n5819 MBRD360 1N5818 MBR0520L MBR0530
Contextual Info: volt test 39.99 0.5 39.99 0.5 39.99 0.5 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 6 39.99 6

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

bd139 equivalent transistor

Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS