MT3S12FS
Contextual Info: MT3S12FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12FS Unit : mm 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 • Superior performance in oscillator applications Superior noise characteristics :NF = 1.7 dB, |S21e|2 = 4.5 dB f =2GHz
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Contextual Info: MT3S12FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12FS Unit : mm 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 • Superior performance in oscillator applications Superior noise characteristics :NF = 1.7 dB, |S21e|2 = 4.5 dB f =2GHz
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200E-02
Abstract: MT3S12FS
Contextual Info: MT3S12FS SPICE parameters UCB SPICE 2G6 20021129 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S12FS 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0 8 0
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1E1A
Abstract: MT3S12FS
Contextual Info: MT3S12FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12FS VHF~UHF Band Low-Noise Amplifier Applications Unit : mm 0.2±0.05 Lead Pb -free. 0.35±0.05 • 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 Superior performance in oscillator applications
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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scj0004n2sc27142sc27152sc2716+162sc31232sc50642sc50842sc50892sc50942sc5106rfm70u12d2sc3136rfm03u3ct2sk709rfm70u12mt3s106mt3s111mt3s111ptim4450tpm1919
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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bce0003ds-167bce0003esec 2sc5088+9samsung uhf/vhf tv tuner2sc5066 datasheetrf bipolar transistortransistor 2sc50662sc5088 secmt6l04aemt4s200tau82mt6l63fs
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MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
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2010/9sce0004k2sc1923mt4s300ttgi0910-50+8mt3s111p2sc3136s8850afta4032ftmt4s300uvhf-uhf band oscillator2sc5108mt4s301t
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
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MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
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2sc941tm2sc3136tim7179-45sltim7179-60sl+15tim7785-4sltim7785-4ultim7785-6ultim7785-8sltim7785-8ultim7785-12ulmt3s111p2sc4250fvtim0910-8ta4029ctctim8996-30ta4029tmd1925-32sc50663sk293
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2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
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sce0004i2sc380tm2sc5066mt3s111p+8mt3s111toshiba transistors catalogtim4450-4ultgi1314-50lmt3s106mt4s200tx-band low noise amplifiers toshiba2sc3136
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256toshiba rf power module s-av24diode varicap bb 112varicap v1472sc386a2sk13103sk782sc5066v101 varicap diode1sv1492sk192
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+132sc2644s-av243sk1153sk291s12563sk733sk121toshiba rf power module s-av243sk101s-au82vldiode varicap bb 1122sc23283sk112
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BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
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3sk1143sk126s12552sc2644+13s-av243sk1153sk291s1256s-av26hbb 505 varicap diodev101 varicap diodevaricap v101varicap v147varicap v103replacement for 2sc5088 horizontal transistorstoshiba s-av29hzener c9v
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa970gt45f122tk13a60ugt30f1232sk4207gt30j124igbt gt30f123gt30f122gt30g1222sc5471igbt gt30j124
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FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256fet k161transistor c2216transistor k161k161 jfetk192atransistor c2668fet k241k161 mosfettransistor c2347transistor c1923
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004isc-432sc1815gt30j124+9smd transistor h2agt45f122tpcp8r01gt30f1232sc1815 smd typesmd marking 8l01h2a smd2sc54712sc5200 amplifiers circuit diagram
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2sc5088 horizontal transistors
Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3sk1143sk126s12552sc2644+152-av243sk1153sk291s12562-av26h2sc5088 horizontal transistorss-av362sk192 mosfet data3sk121 equivalents-av323sk121 fet2sc2879 cb linear circuitreplacement for 2sc5088 horizontal transistors3sk73equivalent transistor 2sc2509
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RFM70U12D
Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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scj0004o2sc27142sc27152sc2716+162sc31232sc50642sc50842sc50892sc51062sc5109rfm70u12d2sc3136rfm70tgi8596-50mt4s300tta4029ta4032ftta4029tuta4029ctc2sk403
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa97045f122gt30f12430g12230f124igbt gt30f124gt30j124gt45f122gt30f123tpca*8023gt50n322
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