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    MRF750 Search Results

    MRF750 Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF750
    Advanced Semiconductor NPN SILICON RF TRANSISTOR Original PDF 247.65KB 6
    MRF750
    Advanced Semiconductor NPN SILICON RF TRANSISTOR Original PDF 12.24KB 1
    MRF750
    Motorola The European Selection Data Book 1976 Scan PDF 40.01KB 1
    MRF750
    Motorola European Master Selection Guide 1986 Scan PDF 111.46KB 1
    MRF750
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 82.91KB 1
    MRF750
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.54KB 1
    MRF7500
    HV Component Associates 500mA Iout, 7.5kV Vrrm Fast Recovery Rectifier Scan PDF 71.25KB 1

    MRF750 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF750

    Contextual Info: MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: D The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 3 4 A 2 C 1 FEATURES INCLUDE: B • High Power Gain • Infinite VSWR F G E


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    mrf750 PDF

    Motorola transistors MRF648

    Abstract: Motorola transistors MRF646 MRF648 MRF515 MRF646 MRF627 Transistor MRF630 2N5945 Motorola MRF644 MRF629
    Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors H igher po w e r o u tp u t de vice s in this U H F po w e r tra n sisto r series fe a tu re in te rna lly in p u t-m a tch e d co n stru ctio n , are de sig ned


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    mrf75005a-0mrf752mrf754+12mrf627mrf559mrf581mrf515motorola transistors mrf648motorola transistors mrf646mrf648mrf646transistor mrf6302n5945 motorolamrf644mrf629 PDF

    2N6367

    Abstract: MRF420 2N5847 MRF425 EB-32 complementary symmetry amplifier 2N5848 2N5849 F450A MRF8004 MRF460
    Contextual Info: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. M otorola has selected 18 transistor/m odule chains fro m 1.5 to 6 0 0 W PEP o utp ut. A ll devices are designed, tested and optim ized fo r frequency ranges fro m 2 to 9 0 0 M H z. These devices are designed fo r yo u r advanced RF


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    power20mrf42545a-08mrf460+12mrf420mrf421eb-32mk433mrf8004mrf4492n63672n5847eb-32 complementary symmetry amplifier2n58482n5849f450a PDF

    Motorola transistors MRF646

    Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644
    Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed


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    mrf75005a-0mrf752mrf754+12mrf627mrf559mrf581mrf515motorola transistors mrf646mrf648motorola transistors mrf648mrf646mrf648 applicationsmrf846mrf839mrf644 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239 PDF

    motorola transistor cross reference

    Abstract: MRF660 MRF648 Motorola transistors MRF630 transistor 7905
    Contextual Info: MOTOROLA SC XSTRS/R F 4fe,E D WM b 3 b ? 2 S 4 00=13843 =1 • M O T b RF Power Bipolar Transistors — UHF Transistors (continued) T -3 3 ^ 7 5 0 0 -1 0 0 0 MHz BAND Capable of operation in either class AB or C, the following devices are designed for operation to 1 GHz. Gold metallized die, diffused


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    syntron rectifier

    Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
    Contextual Info: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES


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    syntron rectifier2cl2fpsm3fhguf10+6westinghouse rectifiersct 4a054a05syntronsyntron diode2cl106 PDF

    900 mhz oscillator using bfr91 transistor

    Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    17a-0105a-01mrf559mrf581+16mrf837mrf8372mrf838/a305a-01mrf557317d-01900 mhz oscillator using bfr91 transistormrf648uhf amplifier design bfr90motorola transistors mrf646motorola transistors mrf648motorola transistors mrf630case 317-01mrf2369mrf586motorola mrf237 PDF

    MRF648

    Abstract: MRF515 Motorola transistors MRF646 motorola MRF515 Motorola transistors MRF630 MRF646 Motorola transistors MRF629 Transistor MRF630 Motorola transistors MRF648 MRF644
    Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.


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    mrf229mrf6042n4427mrf553+16317d-01mrf6072n62552n3553mrf237mrf207mrf648mrf515motorola transistors mrf646motorola mrf515motorola transistors mrf630mrf646motorola transistors mrf629transistor mrf630motorola transistors mrf648mrf644 PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


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    MRS25000

    Abstract: MR10000 MR12500 MR2500 MR5000 MR7500 MRFSD7500 MRP5000 MRSN15000 MR000
    Contextual Info: MR-HIGH VOLTAGE RECTIFIER .25 TYP .12 R 1.38 MAX .17 DIODES L .20 (TYP) Positive Center Tap 1.2A, 5000V/LEG MRP5000 Negative Center Tap (N) (IFAVM of Doubler is IFAVM x 0.5) Fast Recovery Doubler 1.0A, 7500V/LEG MRFSD7500 Repetitive Peak Avg. Forward Max. Forward


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    000v/legmrp5000500v/legmrfsd7500+9mr2500mr5000mr7500mr10000mr12500mr15000mrs25000mrsn15000mr000 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    4A05 diode

    Abstract: ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F
    Contextual Info: HIGH VOLTAGE LOW CURRENT RECTIFIERS – NV, G SERIES FIGURE 24 NV•FP Series FIGURE 0.080 Lead Diameter 0.020 0.12 Max. FIGURE 2 G•FS Series G•FG Series 1” Min. FIGURE 4 0.120 Lead Diameter 0.024 1” Min. D Lead Diameter 0.023 1” Min. 3 L Max. G•GE & G•PE Series


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    ct1000v6aa60ct1000v6aa100ct1000v6aa120ct1000v6aa160+16ct1000v6aa40ct1000v6aa80ct400k6aa120ct400k6aa100ct400k6aa80ct400k6aa404a05 diodect 4a054a05equivalent components of diode her208diode 4a05sp5lfgsm3fg2cl2fphvw3 diodesm3f PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor PDF

    MRS25000

    Abstract: MR 05 5000 MRF transistor MRFS30000 MRF30000 MRP5000 MRS2500 MR10000 MR2500 MR5000
    Contextual Info: HIGH VOLTAGE AXIAL LEAD FLAT PACK RECTIFIER – MR SERIES .25 TYP .12 R 1.38 MAX .17 DIODES L .20 (TYP) Positive Center Tap 1.2A, 5000V/LEG MRP5000 Negative Center Tap (N) (IFAVM of Doubler is IFAVM x 0.5) Fast Recovery Doubler 1.0A, 7500V/LEG MRFSD7500


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    000v/legmrp5000500v/legmrfsd7500+12mr2500mr5000mr7500mr10000mr12500mr15000mrs25000mr 05 5000mrf transistormrfs30000mrf30000mrs2500 PDF

    2N6367

    Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
    Contextual Info: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF


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    2n6370mrf432mrf4332n5070+11mrf401145a07mrf42745a-082n59412n59422n6367mrf4202n5847mrf428mrf823 PDF

    MRS25000

    Abstract: MR 05 5000 MRF5000 MRFSD7500 MRP5000 MRSN15000
    Contextual Info: DEAN TECH/ H V COMPONENTS 3bE E70bfi4fc. D D000m3 S • H V C 0 ^ 0 3 -Ô / MR-Metal Rail High Voltage Rectifiers HVCA Number Repetitive Peak Avg. Forward M o . Forward M ax. Reverse R everse Voltage Current Max. Voltage Drop Current Current Max. Reverse Case


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    MRF 110

    Abstract: MR 05 5000 MRF15000 MRFSD7500 MRP5000 MRSN15000 MRS25000 MRF10000
    Contextual Info: DEAN TECH/ H V C OM P ON EN TS 3bE E70ta4fc. D D 0 0 m 3 D R • H V C 0 ^ 0 3 -0/ MR-Metal Rail High Voltage Rectifiers r HVCA Number RepetitivePeak Avg. Forward M o . Forward Max. Reverse R everse Vottage Current Max. Voltage Drop Current Current Max. Reverse


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