MPSW05 Search Results

MPSW05

Abstract: mpsw06 102k1k
Contextual Info: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage

Contextual Info: MOTOROLA Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage

MPSW05

Abstract: MPSW06
Contextual Info: ON Semiconductort MPSW05 MPSW06* One Watt Amplifier Transistors NPN Silicon *On Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage

MPSW06G

Abstract: MPSW06 MPSW06RLRA MPSW06RLRAG MPSW05 MPSW05G Marking code mps
Contextual Info: MPSW05, MPSW06 MPSW06 is a Preferred Device One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating MPSW05 MPSW06 VCEO

Contextual Info: MPSW05 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)250m

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06 * NPN Silicon 'Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector- Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage

IC 2910

Abstract: MPSW06
Contextual Info: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector −Emitter Voltage VCEO 60 80 Vdc Collector −Base Voltage VCBO 60 80 Vdc Emitter −Base Voltage

Contextual Info: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage

Contextual Info: MPSW05 MPSW06* MAXIMUM RATINGS Symbol Rating MPSW05 MPSW06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage v CBO 60 80 Vdc Emitter-Base Voltage v EBO 4.0 Vdc Collector Current — Continuous *C 500 mAdc Total Device Dissipation f« T a = 2 5 X

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon ‘Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol MPSW05

MPSW06

Abstract: MPSW05 MPSW05G MPSW06G MPSW06RLRA MPSW06RLRAG
Contextual Info: MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 MPSW06 VCEO 60 80 Vdc Collector −Base Voltage

Contextual Info: MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 MPSW06 VCEO 60 80 Vdc Collector −Base Voltage

ANSI Y14.5

Abstract: MAL100
Contextual Info: MPSW05 MPSW06 NPN ONE WATT SiLICON AMPLIFIER TRANSISTORS designed for use as medium-power @ High Collector-Emitter V BR CEO = 60 Vdc (Min) = 80 Vdc (Min) @ Low Collector-Emitter vCE(sat) I Collector-Base Voltage Emitter-Base Voltage ~‘ Total Power Dis~@$$:@

MPSW05

Abstract: MPSW06
Contextual Info: MOTOROLA Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage

Contextual Info: MPSW05 MPSW06* M A X IM U M RATINGS Symbol Rating MPSW05 MPSW06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc v E BO 4.0 Collector Current — C o ntin uo us •c 500 m A dc Total Device Dissip ation a T a = 25°C Derate above 2 5 T

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MPSW06

Abstract: BDC01D MPSW05 BDC01
Contextual Info: ON Semiconductort BDC01D One Watt Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector–Emitter Voltage VCEO 100 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous

MPSW06

Abstract: BDC01D MPSW05
Contextual Info: MOTOROLA Order this document by BDC01D/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor BDC01D NPN Silicon COLLECTOR 2 3 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 14 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector – Emitter Voltage

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main