BDC01D Search Results

MPSW06

Abstract: BDC01D MPSW05 BDC01
Contextual Info: ON Semiconductort BDC01D One Watt Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector–Emitter Voltage VCEO 100 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous

MPSW06

Abstract: BDC01D MPSW05
Contextual Info: MOTOROLA Order this document by BDC01D/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor BDC01D NPN Silicon COLLECTOR 2 3 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 14 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector – Emitter Voltage

transistor 228 T3

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor BDC01D NPN Silicon COLLECTOR 2 3 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 14 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector – Emitter Voltage VCEO 100 Vdc Collector – Base Voltage

Contextual Info: MAXIMUM RATINGS Symbol BDC01D Unit C o lle c to r -E m it t e r V o lt a g e Rating VCEO 100 Vdc C o lle c t o r -B a s e V o lt a g e VCBO 100 Vdc E m it t e r - B a s e V o lt a g e v ebo 5.0 Vdc 'c 0.5 Ade = 25°C PD 1.0 8.0 W a tt m W /°C T o ta l D e v ic e D is s ip a t io n a T q = 25°C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor BDC01D NPN Silicon COLLECTOR 2 1 EMITTER M A X IM U M R A T IN G S Symbol BDC01D Unit Collector-Emitter Voltage Rating VCEO 100 Vdc C ollecto r-Base Voltage VCBO 100 Vdc Em itter-Base Voltage

Contextual Info: BDC01D One Watt Amplifier Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 100 Vdc Collector −Base Voltage VCBO 100 Vdc Emitter −Base Voltage

Contextual Info: MOTOROLA Order this document by BDC01D/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor BDC01D NPN Silicon COLLECTOR 2 3 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 14 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector – Emitter Voltage

Contextual Info: BDC01D MAXIMUM RATINGS Rating Symbol BDC010 Unit VCEO 100 Vdc Collector-Base Voltage v CBO 100 Vdc Em itter-Base Voltage C o llector-E m itter Voltage Vdc 0.5 Ade Total Device Dissipation Derate above 25'C pd 1.0 8.0 W att m W -’ C 2.5 20 W att m W 'C C

MPSW05

Abstract: MPSW06 BDC01D BDC01DRL1 BDC01DRL1G
Contextual Info: BDC01D One Watt Amplifier Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 100 Vdc Collector −Base Voltage VCBO 100 Vdc Emitter −Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att A m plifier Transistor BDC01D NPN Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS R ating C ollector-E m itter Voltage Symbol BDC01D Vdc Unit V C EO 100 C o llecto r-B ase Voltage VCBO 100 Vdc E m itte r-B a s e Voltage

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

300 Watt Amplifier IC

Abstract: BDB01A BDC01A BDC01B BDC01C BDC01D
Contextual Info: MOTOROLA SC 1SE D I t.3b?2SM OGÖSTIB M | XSTRS/R F BDC01A, B, C, D M A X IM U M RATINGS S y m b o l BDC BDC BDC BDC 01A 01B 01C 01D R a tin g Collector-Emitter Voltage VCEO 45 60 Coilector-Base Voltage VCBO 45 60 Em itter-Base Voltage vebo 5.0 Collector Current - C ontinuous

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage

BC237

Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage

bc182 equivalent 2n2907

Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO

transistor MPS5771

Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit

P2d MARKING CODE

Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage

WT transistor

Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc