MPS6519 Search Results

MPS6513

Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721
Contextual Info: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513

Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

MPS6519

Abstract: MPS6517 MPS6518 MPS6513 MPS6515
Contextual Info: MPS6517 MPS6518 MPS6519 SbE PHILIPS INTERNATIONAL TllOÔEb J> DDMSSDO Ö01 PHIN T-Z7-2J AMPLIFIER TRANSISTOR General purpose p-n-p transistors in T O -92 envelopes. The complementary types are M PS6513 to MPS6515. Q U IC K R E F E R E N C E D A T A M PS6517

MPS6516

Abstract: MPS6519 MPS6517 MPS6518 E3060
Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

MPS6515

Abstract: MPS6512 MPS6516 MPS6517 MPS6518 mps*512 MPS6513 MPS6514 MPS6519
Contextual Info: MPS6512 thru MPS6515/MPS6516 thru MPS6519 continued MPS6512 thru MPS6515 (NPN) E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25*Cunle*sotherw isenotad) Characteristic Symbol Min bvceo 30 25 - - bv ebo 4 .0 - - | Typ Max | Unit OFF CHARACTERISTICS

MPS6515

Abstract: MPS6519 MPS6512 MPS6516 MPS6513 MPS6518 transistor mps6515 MPS6514
Contextual Info: MPS6512 thru MPS6515 NPN SILICON MPS6516 thru MPS6519 PNP (SILICON) SILIC O N A N N U L A R SILICO N C O M PLEM EN TAR Y A M P LIF IER T R A N SIST O R S T R A N SIST O R S . . .designed for general-purpose am plifier applications and for complementary circu itry.

mps6514

Contextual Info: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

Contextual Info: I Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LÈAD CODE v CBO v CBO v CEO v EBO 'CBO (V) (V) (V) a v CE @ <c h F:E (V) (V) *CES (mA) VC E (S /IT) 'C (V) (mA) *hfe(1kHZ) MIN *VCES MIN MIN *ICEV MIN MAX Cob (pF) *C ,b MAX h NF

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers

2N4121

Abstract: 2N5219 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING V C E 0 PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VO LTAGE SECTION) hFE V CEO ^ob V C E (sat) tT toff PD \ <v c e r VOLTS TYPE MIN (hfe ) ) Ta @ ’c hFE

mpsa65

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30

n3904

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

mps 06

Abstract: GES6220 MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516
Contextual Info: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE DEVICE NPN V Ml N.-MAX. MPSA55 MPS A 56 MPS3702 MPS3703 60 80 60 80 25 30 30 30 20 30 30 25 25 40 40 40 25 40 40 30 40 40 30 25 25 60 60 80 80 40 40 25 25 MPS A05 MPSA06 MPS3704 MPS3705 MPS3706

MPS4355

Abstract: MPS4356 MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 MPS6523 MPS6533 MPS6534
Contextual Info: Electrical Characteristics Ta=25"C, Unless Otherwise Specified Maximum Ratings Type No. MPS4355 MPS4356 60 80 60 80 5 5 0.625 0.625 ^ca (V) Max 0.5 0.5 0.05 0.05 50 50 'c e s (HA) Max »FE 0(V ) Min 75 75 100 75 60 30 40 50 40 25 'c & ^CE ^BEfSAT) (mA)

MPS6531

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G