6518 Search Results

AN 6518

Contextual Info: HM-6518 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Features Description • Low Power Standby. 50^W Max The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high

Contextual Info: œÎ  HM-6518/883 I 1024 X 1 CMOS RAM January 1992 Features • Description The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

MPS6517

Abstract: MPS6518 MPS6519 MPS6513 MPS6515 R624 6518
Contextual Info: • MPS6517 6518 MPS6519 bfci.53ti31 D0EÔ001 Oat. B A P X N AMER PHILIPS/DISCRETE bTE D AMPLIFIER TRANSISTOR General purpose p-n-p transistors in TO-92 envelopes. The complementary types are MPS6513 to MPS6515. QUICK REFERENCE DATA MPS6517 6518 6519 Collector-emitter voltage

Contextual Info: if ì H A R R IS H M -6 5 1 8 S E M I C O N D U C T O R 1024 X 1 CMOS RAM August 1996 Features Description • Low Power Standby. 50|.iW Max The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

HM-6518

Abstract: HM-6518-9 HM-6518B-9 AN 6518 6518-9 HM1-6518B-9 HM1-6518
Contextual Info: HM-6518 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

Contextual Info: ECX-6518-13.560M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6518 -13.560M Series Ecliptek Custom Crystal Nominal Frequency 13.560MHz ELECTRICAL SPECIFICATIONS

Contextual Info: HM-6518 H A R R IS æ S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

AN 6518

Abstract: 6518 29861
Contextual Info: HM-6518/883 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

6518-8

Contextual Info: 1024 x 1 CMOS RAM Features HM-6518 H M -6518 33 HARRIS Pinout TOP VIEW • L o w O p e ra tin g P o w e r . 2 0 m W /M H z M ax. i 5 [ 2 IS 3 v c c ?7 ] S2 • F a s t A c c e s s T i m e . 1 8 0 n s M ax.

AN 6518

Contextual Info: HM-6518/883 TM 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

632-2 425

Abstract: thermocouple kx 876-3138 876-3150 876-3210 876-3212 876-3214 876-3220 876-3222 876-3224
Contextual Info: Olympic Retractile Cords, Thermocouple and Extension Wire Retractile Cords Unshielded Plastic Jacketed Miniature Cords, Current Rating: 0.5 Amp Nom. Nom. Mfr.Õs No. of Cond. Jacket AWG O.D. Coil Type Cond. Strand Cord O.D. Material 6516P 6517P 6518P 6519P

90914

Abstract: WE-310
Contextual Info: Model 6518 BNC to 310 Plug Cable FEATURES: • Provides quick access from a WE 310 Jack to a BNC Female • BNC connector is molded directly to the cable for added pull strength MATERIALS: Connectors: BNC Male Body: Brass, Tarnish resistant plating Dielectric: PTFE

Contextual Info: Ordering number: EN 5162A Monolithic Linear IC LA6517, 6517M, 6518M No. 5162A i SM ÊYO 2-Output Power Operational Amplifier Applications Package Dimensions The LA6517, LA6517M, and 6518M are 2-output power operational amplifiers developed for use in consumer and

AN 6518

Contextual Info: HM-6518/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

6508B

Abstract: 6518B
Contextual Info: 6508B/6518B 1024-BIT 1024 X 1 CMOS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUT D E S C R IP T IO N — T h e 6 5 0 8 B /6 5 1 8 B are h ig h -sp e e d , J o w -p o w e r s ilic o n -g a te C M O S s ta tic R A M s o rg a n ­ ized as 1 0 2 4 w o rd s b y 1 b it . Th ese R A M s are d esig ne d w i t h a ll in p u ts a n d o u t p u t s T T L c o m p a tib le .

LS-11S

Contextual Info: 6508B/6518B 1024-BIT 1024 X 1 CMOS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUT D E S C R IP TIO N — The 6 5 0 8 B /6 5 1 8 B are high-speed, low -p ow er silicon-gate CMOS static R A M s organ­ ized as 1024 w ords b y 1 b it. These R A M s are designed w ith all inpu ts and o u tp u ts T T L com patible.

HM-6518-5

Contextual Info: Specifications HM-6518-S ABSOLUTE M A X IM U M RATINGS OPERATING RANGE Supply Voltage - VCC -GND -0.3V to +8.0V Input or O utput Voltage Applied (G N D -0 .3 V ) to (VCC +0.3V) Storage Temperature Operating Supply Voltage -VCC Commercial 4.5V to 5.5V Operating Temperature

LA6517

Abstract: LA6517M LA6518M 3097B
Contextual Info: 注文コード No.N 5 1 6 2 B 半導体ニューズ No.N5162A をさしかえてください。 LA6517 LA6517M 6518M モノリシックリニア集積回路 2出力パワーオペアンプ 概要 LA6517,6517M,6518M は民生,産業用各種機器に開発した 2 出力パワーオペアンプである。

6502 CPU architecture block diagram

Abstract: AN 6518 6502 microprocessor M6800 NCR Microelectronics Division 6507 cpu
Contextual Info: 6518 * * * * * C R SINGLE-CHIP MICROPROCESSOR WITH RAM AND I/O 6507 CPU - 8-bit parallel processing - 13 addressing modes • Decimal and binary arithmetic modes - True indexing capability - 56 instructions 1 2 8 x 8 static RAM Two bidirectional TTL-compatible program­

AN 6518

Contextual Info: HM-6518/883 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6518/883 is a 1024 x 1 static CMOS RAM

Contextual Info: SILICON TRANSISTO R FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKA G E DIMENSIONS • in m i!lim «t«rs Resistor B u ilt-in T Y P E B O— w v Ri 2 .8 1 0 .2 0 .65181; 1.5 • R, * 10 kn C o m p le m e n ta ry to F N 1 A 4 Z

Contextual Info: Specifications HM -6518B-2/HM -6518B-9 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC -G N D -0 .3 V to +8.0V In p u t or O u tp u t V oltage A pplied (GND -0 .3 V ) to (VCC + 0.3V ) Storage Temperature O perating S upply Voltage -V C C

LA6517

Abstract: LA6517M LA6518M MFP16FS 100X10V RR65
Contextual Info: Ordering number: EN 5162A Monolithic Linear IC LA6517, 6517M, 6518M No. 5162A SAiYO i 2-Output Power Operational Amplifier Applications Package Dimensions The LA6517, LA6517M, and 6518M are 2-output power operational amplifiers developed for use in consumer and