6518B Search Results
6518B Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
6518B |
![]() |
1024-Bit CMOS RAM with 3-State Outputs | Original | 91.42KB | 3 |
6518B Price and Stock
Resistors Inc MMFR6518B1K80V91.8 KOHMS 0.1% 1W 5PPM/ |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MMFR6518B1K80V9 | Bulk | 280 | 1 |
|
Buy Now | |||||
Resistors Inc MMFR6518B27K0V927 KOHMS 0.1% 1W 5PPM/ |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MMFR6518B27K0V9 | Bulk | 280 | 1 |
|
Buy Now | |||||
Resistors Inc MMFR6518B2K70V92.7 KOHMS 0.1% 1W 5PPM/ |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MMFR6518B2K70V9 | Bulk | 276 | 1 |
|
Buy Now | |||||
Resistors Inc MMFR6518B220RV9220 OHMS 0.1% 1W 5PPM/ |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MMFR6518B220RV9 | Bulk | 270 | 1 |
|
Buy Now | |||||
Resistors Inc MMFR6518B1K30V91.3 KOHMS 0.1% 1W 5PPM/ |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MMFR6518B1K30V9 | Bulk | 250 | 1 |
|
Buy Now |
6518B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
6508B
Abstract: 6518B
|
OCR Scan |
6508B/6518B 1024-BIT 6508B/6518B F6518) 6508B 6518B | |
LS-11SContextual Info: 6508B/6518B 1024-BIT 1024 X 1 CMOS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUT D E S C R IP TIO N — The 6 5 0 8 B /6 5 1 8 B are high-speed, low -p ow er silicon-gate CMOS static R A M s organ ized as 1024 w ords b y 1 b it. These R A M s are designed w ith all inpu ts and o u tp u ts T T L com patible. |
OCR Scan |
6508B/6518B 1024-BIT LS-11S | |
Contextual Info: Specifications HM -6518B-2/HM -6518B-9 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC -G N D -0 .3 V to +8.0V In p u t or O u tp u t V oltage A pplied (GND -0 .3 V ) to (VCC + 0.3V ) Storage Temperature O perating S upply Voltage -V C C |
OCR Scan |
HM-6518B-2/HM-6S18B-9 -550C 20nsec; | |
AN 6518Contextual Info: HM-6518 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Features Description • Low Power Standby. 50^W Max The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high |
OCR Scan |
HM-6518 HM-6518 AN 6518 | |
6518-8Contextual Info: 1024 x 1 CMOS RAM Features HM-6518 H M -6518 33 HARRIS Pinout TOP VIEW • L o w O p e ra tin g P o w e r . 2 0 m W /M H z M ax. i 5 [ 2 IS 3 v c c ?7 ] S2 • F a s t A c c e s s T i m e . 1 8 0 n s M ax. |
OCR Scan |
HM-6518 6518-8 | |
Contextual Info: HARRIS SEMICOND SECTOR TS D e | 430SS71 □ 0 1 Q b 4 Iì 0 H M -6 5 1 8 h a r r is CO in <o 1024 x 1 CMOS RAM Pinout Features TOP VIEW • H M -6 1 0 0 C o m p a tib le 5 0 jiW Max. • L o w S ta n d b y P o w e r. • L o w O p e ra tin g P o w e r |
OCR Scan |
430SS71 43Q2S71 | |
Contextual Info: IJ H A R R IS H M - 6 5 1 8 1024 x 1 CMOS RAM Pinout Features TOP VIEW • H M -6 1 0 0 Compatible s iC • Low Standby P o w e r. 50uW Max 1 i pvcc 2 17 ]S2 • Fast Access T im e .180ns Max. |
OCR Scan |
180ns | |
6518
Abstract: 65188 TE-32 HM-6100 HM-6518 HM-6518-5 HM-6518-8 HM-6518-9 HM-6518B-9 6518-9
|
OCR Scan |
HM-6518 HM-6100 50jiW 20mW/MHz 180ns HM-6518-5. HM-6518-9 HM-6518-8 6518 65188 TE-32 HM-6518 HM-6518-5 HM-6518-8 HM-6518-9 HM-6518B-9 6518-9 | |
Contextual Info: HAHRIS H M - 6518/883 1024 x 1 CMOS RAM June 1989 P in o u t Features H M 1 -6 5 1 8/88 3 CERAMIC DIP TOP VIEW • This Circuit is Processed in Accordance to M il-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tand . |
OCR Scan |
il-Std-883 20mW/MHz 180ns | |
HM1-6518B-9
Abstract: HM1-6518
|
OCR Scan |
HM-6518 HM-6518 HM1-6518B-9 HM1-6518 | |
am 6518Contextual Info: HM-6518/883 1024 x 1 CMOS RAM March 1997 Features • Description The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. |
OCR Scan |
HM-6518/883 HM-6518/883 MIL-STD883 100kHz am 6518 | |
Contextual Info: Wiftsras HM-6518/883 1 02 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. |
OCR Scan |
HM-6518/883 MIL-STD883 HM-6518/883 100kHz | |
pin diagram AMD FX 9590
Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
|
OCR Scan |
K29793 NZ21084 RS39191 pin diagram AMD FX 9590 Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298 | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
|
OCR Scan |
1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 |