MPQ3799 Search Results

MPQ3798

Abstract: MPQ3799
Contextual Info: M AXIM UM RATINGS Rating Symbol MPQ3798 MPQ3799 Unit VCEO -4 0 -6 0 Vdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCBO -6 0 Vdc Ve b O -5 .0 Vdc 'C -5 0 mAdc Collector Current — Continuous Total Device Dissipation @TA = 25X11

Contextual Info: MPQ3799 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)2.0 Minimum Operating Temp (øC)-65õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n

trasistor

Abstract: MPQ3798 MPQ3799 trasistor pin configuration transistor B 116
Contextual Info: MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: TA=25°C

2N3798

Abstract: 2N3799 MPQ3798 MPQ3799 RNW transistor
Contextual Info: MPQ3798 silicon MPQ3799 QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low-noise amplifier applications. • DC Current Gain Specified - 10/jA dc to 10 mAdc h fE = 1^0 (Min) @ lc = 500 jjAdc — MPQ3798

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ3798 MPQ3799* PNP Silicon XyLiip Upliil lifl 51 m LrKJ Lrvl PNP ‘Motorola Preferred Device JXLJXl U ill uJ u l l uj uj uj MAXIMUM RATINGS Symbol MPQ379S MPQ3799 Unit C ollector-E m itter Voltage

Contextual Info: M A XIM U M RATINGS Symbol MPQ3798 MPQ3799 Unit C o lle cto r-E m itte r Voltage VCEO -4 0 -6 0 Vdc C ollector-Base Voltage VCBO -6 0 Em itter-Base Voltage v EBO - 5 .0 Vdc *C -5 0 m A dc Rating C o lle ctor C u rre n t — C o ntinuous Total Device D issipation

mpq3799

Abstract: MPQ3798 motorola ic
Contextual Info: MOTOROLA Order this document by MPQ3798/D SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ3798 MPQ3799* PNP Silicon 14 13 12 11 10 9 8 *Motorola Preferred Device PNP 1 2 3 4 5 6 7 MAXIMUM RATINGS Rating Symbol MPQ3798 Collector – Emitter Voltage

Contextual Info: MOTOROLA Order this document by MPQ3798/D SEMICONDUCTOR TECHNICAL DATA Quad Am plifier Transistors MPQ3798 MPQ3799* PNP Silicon ly i nil n il rrn np nn m LoJ LrKJ PNP r v i ‘Motorola Preferred Device r v i LU l L i Li J L iJ L il L ÌI Ll I MAXIMUM RATINGS

BC237

Abstract: MPQ3799 BC141-16
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ3798 MPQ3799* PNP Silicon 14 13 12 11 10 9 8 *Motorola Preferred Device PNP 1 2 3 4 5 6 7 MAXIMUM RATINGS Rating Symbol MPQ3798 Collector – Emitter Voltage VCEO –40 Collector – Base Voltage

2857 transistor

Abstract: MPQ2483 MPQ3798 MPQ3799 MPQ2484 100YA
Contextual Info: CENTRAL SEMICONDUCTOR SED D • nö'HbB □□□□3b? □ ■ CEN T " 3 7 - «2-7 g@mig iagls3£t r Corp. MPQ3798 MPQ3799 Ssmleondisetor corn, PNP SILICON QUAD TRANSISTOR central central sem iconductor Corp. Central Sem iconductor Corp. JEDEC T O - 116 CASE

Contextual Info: CENTRAL SEMICONDUCTOR =!£]> D nflm3 00GG3b7 G ICEN T- 37 'X Ir\ MPQ3798 MPQ3799 @ ü^teonsla9efior C o r p . c e n ta l Ssm ieoiiäuetor corn. PNP SILICON QUAD TRANSISTOR C e n tra l S e m ic o n d u c to r C o rp . C e n tra l S e m ic o n d u c to r C o rp .

transistors c 2216

Contextual Info: M A X IM U M R A T IN G S Symbol MPQ3798 MPQ3799 Unit C o llector-E m itter Voltage VCEO -4 0 -6 0 Vdc Collector-Base Voltage VCBO - 60 Vdc Em itter-Base Voltage vebo - 5.0 Vdc Rating C ollector C urrent — Continuous Total Device Dissipation in Ta - 25CC|1

mpq3799

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ3798 MPQ3799* PNP Silicon nr? n p n p rm /ïoi rr? rs i laj laj 'Motorola Preferred Device PNP .ryi. .ivi. LJJ l_2J LaJ LU L§J L§J LZJ MAXIMUM RATINGS Symbol Rating MPQ3798 MPQ3799 Unit

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N3906

Abstract: 2N2222 hfe 2N3904 NPN dip
Contextual Info: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS